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SIHD2N80E-GE3

SIHD2N80E-GE3
Mfr. #:
SIHD2N80E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHD2N80E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD2N80E-GE3 DatasheetSIHD2N80E-GE3 Datasheet (P4-P6)SIHD2N80E-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHD2N80E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
2.8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.38 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
9.8 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
62.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
पतन समय:
27 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
19 ns
सामान्य टर्न-अन ढिलाइ समय:
11 ns
एकाइ वजन:
0.011993 oz
Tags
SIHD2, SIHD, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 2.8A 3-Pin TO-252
***ment14 APAC
MOSFET, N-CH, 800V, 2.8A, 150DEG C
***ark
Mosfet, N-Ch, 800V, 2.8A, 150Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHD2N80E-GE3
DISTI # SIHD2N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 2.8A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1401In Stock
  • 6000:$0.5726
  • 3000:$0.6027
  • 500:$0.8180
  • 100:$0.9902
  • 25:$1.2056
  • 10:$1.2700
  • 1:$1.4200
SIHD2N80E-GE3
DISTI # SIHD2N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 2.8A ID Thin Lead 3-Pin DPAK (Alt: SIHD2N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.5479
  • 500:€0.5549
  • 100:€0.5639
  • 50:€0.5729
  • 25:€0.6479
  • 10:€0.7989
  • 1:€1.1139
SIHD2N80E-GE3
DISTI # SIHD2N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 2.8A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD2N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.5249
  • 18000:$0.5399
  • 12000:$0.5549
  • 6000:$0.5789
  • 3000:$0.5959
SIHD2N80E-GE3
DISTI # 78AC6518		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes2995
  • 500:$0.7880
  • 250:$0.8520
  • 100:$0.9160
  • 50:$1.0100
  • 25:$1.1100
  • 10:$1.2000
  • 1:$1.4500
SIHD2N80E-GE3
DISTI # 78-SIHD2N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		2729
  • 1:$1.4400
  • 10:$1.1900
  • 100:$0.9070
  • 500:$0.7800
  • 1000:$0.6150
SIHD2N80E-GE3
DISTI # 2932923		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, 150DEG C
RoHS: Compliant		2995
  • 1000:$0.9200
  • 500:$0.9740
  • 250:$1.1500
  • 100:$1.4000
  • 10:$1.7900
  • 1:$2.1600
SIHD2N80E-GE3
DISTI # 2932923		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, 150DEG C2990
  • 500:£0.5650
  • 250:£0.6110
  • 100:£0.6570
  • 10:£0.9150
  • 1:£1.1900
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उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
SIHD2N80E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.४४
US$ १.४४
10
US$ १.१९
US$ ११.९०
100
US$ ०.९१
US$ ९०.७०
500
US$ ०.७८
US$ ३९०.००
1000
US$ ०.६२
US$ ६१५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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