OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

TK31J60W,S1VQ

TK31J60W,S1VQ
Mfr. #:
TK31J60W,S1VQ
निर्माता:
Toshiba
विवरण:
MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TK31J60W,S1VQ डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31J60W,S1VQ DatasheetTK31J60W,S1VQ Datasheet (P4-P6)TK31J60W,S1VQ Datasheet (P7-P9)TK31J60W,S1VQ Datasheet (P10)
ECAD Model:
थप जानकारी:
TK31J60W,S1VQ थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-3PN-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
30.8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
88 mOhms
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
105 nC
Pd - शक्ति अपव्यय:
230 W
कन्फिगरेसन:
एकल
व्यापार नाम:
DTMOSIV
उचाइ:
20 mm
लम्बाइ:
15.5 mm
शृङ्खला:
TK31J60W
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.5 mm
ब्रान्ड:
तोशिबा
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
25
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.245577 oz
Tags
TK31J60W,S, TK31J, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-3Pn(Os) Moq=50 Pd=230W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
***et
DTMOSIV_600V_88MOHM MAX(VGS=10V)_TO-3P(N)
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
भाग # Mfg। विवरण स्टक मूल्य
TK31J60W,S1VQ
DISTI # V99:2348_13896269		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube25
  • 2500:$4.3030
  • 1000:$4.4470
  • 500:$4.9850
  • 250:$5.4040
  • 100:$5.8070
  • 25:$6.3230
  • 10:$6.8150
  • 1:$7.4270
TK31J60W,S1VQ
DISTI # TK31J60WS1VQ-ND		Toshiba America Electronic ComponentsMOSFET N CH 600V 30.8A TO-3P(N)
RoHS: Compliant
Min Qty: 1
Container: Tube		23In Stock
  • 500:$5.7629
  • 100:$6.8783
  • 25:$7.6220
  • 1:$9.3000
TK31J60W,S1VQ
DISTI # 30524811		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube25
  • 25:$6.3120
  • 10:$6.8030
  • 2:$7.4120
TK31J60WS1VQ
DISTI # TK31J60W,S1VQ		Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin SC-65 Tube - Rail/Tube (Alt: TK31J60W,S1VQ)
RoHS: Compliant
Min Qty: 25
Container: Tube		Americas - 0
  • 25:$5.1900
  • 50:$4.8900
  • 100:$4.6900
  • 150:$4.3900
  • 250:$4.2900
TK31J60W,S1VQ
DISTI # 757-TK31J60WS1VQ		Toshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
RoHS: Compliant		23
  • 1:$8.4500
  • 10:$7.6100
  • 25:$6.9300
  • 100:$6.2600
  • 250:$5.7500
  • 500:$5.2400
  • 1000:$4.5700
TK31J60WS1VQ(OToshiba America Electronic Components 50
    TK31J60W,S1VQ(O)
    DISTI # C1S751201082507    		Toshiba America Electronic ComponentsMOSFETs55
    • 50:$11.9000
    • 10:$14.2000
    • 5:$14.9000
    TK31J60W,S1VQ
    DISTI # C1S751200875760    		Toshiba America Electronic ComponentsMOSFETs
    RoHS: Compliant    		25
    • 25:$6.3120
    • 10:$6.8030
    • 1:$7.4120
    TK31J60W,S1VQToshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
    RoHS: Compliant    		Americas -
      TK31J60WS1VQToshiba America Electronic ComponentsMOSFET POWER MOSFET TRANSISTOR
      RoHS: Compliant      		Americas -
        छवि भाग # विवरण
        FCB199N65S3

        Mfr.#: FCB199N65S3

        OMO.#: OMO-FCB199N65S3

        		 MOSFET SuperFET3 650V 199mOhm D2PAK PKG
        FCP190N60E

        Mfr.#: FCP190N60E

        OMO.#: OMO-FCP190N60E

        		 MOSFET 600V N-CHAN MOSFET
        FCD360N65S3R0

        Mfr.#: FCD360N65S3R0

        OMO.#: OMO-FCD360N65S3R0

        		 MOSFET SUPERFET3 650V 10A 360 mOhm
        FCP190N60E

        Mfr.#: FCP190N60E

        OMO.#: OMO-FCP190N60E-ON-SEMICONDUCTOR

        		 MOSFET N-CH 600V TO220-3
        FCB199N65S3

        Mfr.#: FCB199N65S3

        OMO.#: OMO-FCB199N65S3-ON-SEMICONDUCTOR

        		 MOSFET N-CH 650V 14A D2PAK
        FCD360N65S3R0

        Mfr.#: FCD360N65S3R0

        OMO.#: OMO-FCD360N65S3R0-ON-SEMICONDUCTOR

        		 SUPERFET3 650V DPAK
        उपलब्धता
        स्टक:
        18
        अर्डर मा:
        2001
        मात्रा प्रविष्ट गर्नुहोस्:
        TK31J60W,S1VQ को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ८.४५
        US$ ८.४५
        10
        US$ ७.६१
        US$ ७६.१०
        25
        US$ ६.९३
        US$ १७३.२५
        100
        US$ ६.२६
        US$ ६२६.००
        250
        US$ ५.७५
        US$ १ ४३७.५०
        500
        US$ ५.२४
        US$ २ ६२०.००
        1000
        US$ ४.५७
        US$ ४ ५७०.००
        2500
        US$ ४.४०
        US$ ११ ०००.००
        बाट सुरु गर्नुहोस्
        Top