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IRF7492PBF

IRF7492PBF
Mfr. #:
IRF7492PBF
निर्माता:
Infineon / IR
विवरण:
MOSFET 200V 1 N-CH HEXFET 79mOhms 39nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF7492PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
3.7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
79 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
39 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
HEXFET पावर MOSFET
चौडाइ:
3.9 mm
ब्रान्ड:
Infineon / IR
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
95
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
27 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
भाग # उपनाम:
SP001554342
एकाइ वजन:
0.019048 oz
Tags
IRF7492, IRF749, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ied Electronics & Automation
MOSFET, 200V, 3.7A, 79 MOHM, 39 NC QG, SO-8
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):79mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; SMD Marking:F7492; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
भाग # Mfg। विवरण स्टक मूल्य
IRF7492PBF
DISTI # IRF7492PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 3.7A 8-SOIC
RoHS: Compliant
Min Qty: 665
Container: Tube		Limited Supply - Call
    IRF7492PBF
    DISTI # 70018263    		Infineon Technologies AGMOSFET,200V,3.7A,79 MOHM,39 NC QG,SO-8
    RoHS: Compliant    		0
    • 665:$0.8650
    • 1330:$0.8470
    • 3325:$0.8210
    • 6650:$0.7870
    • 16625:$0.7350
    IRF7492PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***155
    • 46:$1.1025
    • 12:$1.3230
    • 1:$2.2050
    IRF7492PBFInternational Rectifier 58
      IRF7492PBF
      DISTI # 9264353      		Infineon Technologies AGMOSFET, N, SO-8
      RoHS: Compliant      		0
      • 1000:$0.8890
      • 500:$0.9520
      • 250:$1.0100
      • 100:$1.1300
      • 10:$1.4700
      • 1:$2.1300
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      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1000
      मात्रा प्रविष्ट गर्नुहोस्:
      IRF7492PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
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