APT10086BVRG

APT10086BVRG
Mfr. #:
APT10086BVRG
निर्माता:
Microchip / Microsemi
विवरण:
MOSFET FG, MOSFET, 1000V, TO-247, RoHS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
APT10086BVRG डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.211644 oz
Tags
APT10086B, APT1008, APT100, APT10, APT1, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube
***rochip
MOSFET MOS5 1000 V 86 Ohm TO-247
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247
***r Electronics
Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 600V, 16A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***icroelectronics
N-Channel 600 V, 0.48 Ohm, 13 A, TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
***nell
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 13A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-247 package
***ark
N CHANNEL MOSFET, 600V, 10A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ure Electronics
N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-247
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ark
MOSFET Transistor, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS™ Power Mosfet - TO-247-3
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 13.8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
भाग # Mfg। विवरण स्टक मूल्य
APT10086BVRG
DISTI # 24838786
Microsemi CorporationTrans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247
RoHS: Compliant
7
  • 4:$15.0500
APT10086BVRG
DISTI # APT10086BVRG
Microchip Technology IncTrans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT10086BVRG)
RoHS: Compliant
Container: Tube
Americas - 0
    APT10086BVRG
    DISTI # 494-APT10086BVRG
    Microchip Technology IncMOSFET Power MOSFET - MOS5
    RoHS: Compliant
    25
    • 1:$26.1000
    • 5:$25.0800
    • 10:$24.1400
    • 25:$22.1800
    • 50:$21.3700
    • 100:$20.6200
    • 250:$18.9200
    APT10086BVRG
    DISTI # APT10086BVRG
    Microsemi CorporationPOWER MOSFET TRANSISTOR
    RoHS: Compliant
    7
    • 1:$12.0600
    • 50:$11.7600
    • 100:$11.6200
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    नयाँ र मौलिक
    उपलब्धता
    स्टक:
    25
    अर्डर मा:
    2008
    मात्रा प्रविष्ट गर्नुहोस्:
    APT10086BVRG को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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