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SIR662DP-T1-GE3

SIR662DP-T1-GE3
Mfr. #:
SIR662DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR662DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR662DP-T1-GE3 DatasheetSIR662DP-T1-GE3 Datasheet (P4-P6)SIR662DP-T1-GE3 Datasheet (P7-P9)SIR662DP-T1-GE3 Datasheet (P10-P12)SIR662DP-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:
SIR662DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.2 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
96 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
104 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SIR
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
82 S
पतन समय:
11 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
11 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
33 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
भाग # उपनाम:
SIR662DP-GE3
एकाइ वजन:
0.017870 oz
Tags
SIR662DP-T1, SIR662DP-T, SIR662, SIR66, SIR6, SIR
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R / MOSFET N-CH 60V 60A PPAK SO-8
***ied Electronics & Automation
60V 2.7mOhm@10V 60A N-Ch MV T-FET
***nell
MOSFET, N CH, DIO, 60V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SiR662DP TrenchFET® Power MOSFET
Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFET provides industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET® Power MOSFET also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET® Power MOSFET provide lower conduction losses while also lowering switching losses, especially at higher frequency. It is designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
भाग # Mfg। विवरण स्टक मूल्य
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.9623
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0646
  • 500:$1.2848
  • 100:$1.6519
  • 10:$2.0560
  • 1:$2.2800
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0646
  • 500:$1.2848
  • 100:$1.6519
  • 10:$2.0560
  • 1:$2.2800
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR662DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9429
  • 6000:$0.9149
  • 12000:$0.8779
  • 18000:$0.8529
  • 30000:$0.8299
SIR662DP-T1-GE3
DISTI # 83T3534		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$2.0200
  • 25:$1.6800
  • 50:$1.4900
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9400
SIR662DP-T1-GE3
DISTI # 65T1666		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.9590
  • 3000:$0.9530
  • 6000:$0.9080
  • 12000:$0.8040
SIR662DP-T1-GE3
DISTI # 64T4039		Vishay IntertechnologiesMOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V , RoHS Compliant: Yes0
  • 1:$2.0200
  • 25:$1.6800
  • 50:$1.4900
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9400
SIR662DP-T1-GE3
DISTI # 70459586		Vishay Siliconix60V 2.7mOhm@10V 60A N-Ch MV T-FET
RoHS: Compliant		0
  • 3000:$1.2520
SIR662DP-T1-GE3
DISTI # 781-SIR662DP-T1-GE3		Vishay IntertechnologiesMOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
RoHS: Compliant		0
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9400
  • 3000:$0.8750
  • 6000:$0.8430
  • 9000:$0.8100
SIR662DP-T1-GE3Vishay IntertechnologiesMOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FETAmericas -
    SIR662DP-T1-GE3
    DISTI # 2056694    		Vishay IntertechnologiesMOSFET, N CH, DIO, 60V,100A, PPK SO8
    RoHS: Compliant    		0
    • 1:$3.2000
    • 10:$2.6600
    • 100:$2.0600
    • 500:$1.8100
    • 1000:$1.5000
    • 3000:$1.3900
    • 6000:$1.3400
    • 9000:$1.2900
    SIR662DP-T1-GE3
    DISTI # 2127797    		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-
    RoHS: Compliant    		0
    • 1:$3.2000
    • 10:$2.6600
    • 100:$2.0600
    • 500:$1.8100
    • 1000:$1.5000
    • 3000:$1.3900
    • 6000:$1.3400
    • 9000:$1.2900
    SIR662DP-T1-GE3
    DISTI # 2056694    		Vishay IntertechnologiesMOSFET, N CH, DIO, 60V,100A, PPK SO8
    RoHS: Compliant    		0
    • 1:£1.7100
    • 10:£1.2800
    • 100:£0.9730
    • 250:£0.9120
    • 500:£0.8500
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    उपलब्धता
    स्टक:
    17
    अर्डर मा:
    2000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIR662DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.०१
    US$ २.०१
    10
    US$ १.६७
    US$ १६.७०
    100
    US$ १.२९
    US$ १२९.००
    500
    US$ १.१३
    US$ ५६५.००
    1000
    US$ ०.९४
    US$ ९३९.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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