IPB035N08N3 G

IPB035N08N3 G
Mfr. #:
IPB035N08N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB035N08N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB035N08N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
117 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
214 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
75 S
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
79 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
45 ns
सामान्य टर्न-अन ढिलाइ समय:
23 ns
भाग # उपनाम:
IPB035N08N3GATMA1 IPB35N8N3GXT SP000457588
एकाइ वजन:
0.068654 oz
Tags
IPB035N08N3G, IPB035, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB035N08N3GATMA1
DISTI # IPB035N08N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$1.8078
IPB035N08N3GATMA1
DISTI # IPB035N08N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$2.2079
  • 100:$2.7266
  • 10:$3.3250
  • 1:$3.7200
IPB035N08N3GATMA1
DISTI # IPB035N08N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$2.2079
  • 100:$2.7266
  • 10:$3.3250
  • 1:$3.7200
IPB035N08N3GXT
DISTI # IPB035N08N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB035N08N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.5900
  • 2000:$1.5900
  • 4000:$1.4900
  • 6000:$1.4900
  • 10000:$1.3900
IPB035N08N3GATMA1
DISTI # SP000457588
Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin TO-263 T/R (Alt: SP000457588)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.0900
  • 2000:€1.5900
  • 4000:€1.4900
  • 6000:€1.3900
  • 10000:€1.3900
IPB035N08N3GATMA1
DISTI # 13AC9026
Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes1
  • 1:$3.1100
  • 10:$2.6500
  • 25:$2.5300
  • 50:$2.4100
  • 100:$2.2900
  • 250:$2.1800
  • 500:$1.9500
IPB035N08N3 G
DISTI # 726-IPB035N08N3G
Infineon Technologies AGMOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant
43
  • 1:$3.1100
  • 10:$2.6500
  • 100:$2.2900
  • 250:$2.1800
  • 500:$1.9500
  • 1000:$1.6500
IPB035N08N3GATMA1
DISTI # 726-IPB035N08N3GATMA
Infineon Technologies AGMOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant
0
  • 1:$3.1100
  • 10:$2.6500
  • 100:$2.2900
  • 250:$2.1800
  • 500:$1.9500
  • 1000:$1.6500
IPB035N08N3 G
DISTI # TMOSP8920
Infineon Technologies AGN-CH80V 100A4mOhm TO263-3
RoHS: Compliant
Stock DE - 0Stock US - 0
  • 1000:$2.3800
  • 2000:$2.2400
  • 3000:$1.9000
  • 4000:$1.8000
IPB035N08N3GATMA1
DISTI # 2725839
Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-263
RoHS: Compliant
1
  • 1:$5.9400
  • 10:$5.3000
  • 100:$4.3500
  • 500:$3.5200
IPB035N08N3GATMA1
DISTI # 2725839
Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-263
RoHS: Compliant
55
  • 1:£2.9000
  • 10:£2.1500
  • 100:£1.9900
छवि भाग # विवरण
LM3671QMF-1.2/NOPB

Mfr.#: LM3671QMF-1.2/NOPB

OMO.#: OMO-LM3671QMF-1-2-NOPB

Switching Voltage Regulators 2MHz 600mA SD DC-DC Cnvtr
DSC1001AL5-050.0000

Mfr.#: DSC1001AL5-050.0000

OMO.#: OMO-DSC1001AL5-050-0000-MICROCHIP-TECHNOLOGY

Oscillator MEMS 50MHz ±10ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN EP SMD Tube
LM3671QMF-1.2/NOPB

Mfr.#: LM3671QMF-1.2/NOPB

OMO.#: OMO-LM3671QMF-1-2-NOPB-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators 2MHz 600mA SD DC-DC Cnvt
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
IPB035N08N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.१०
US$ ३.१०
10
US$ २.६४
US$ २६.४०
100
US$ २.२९
US$ २२९.००
250
US$ २.१७
US$ ५४२.५०
500
US$ १.९४
US$ ९७०.००
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
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