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SIHG80N60EF-GE3

SIHG80N60EF-GE3
Mfr. #:
SIHG80N60EF-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds; 30V Vgs TO-247AC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHG80N60EF-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHG80N60EF-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247AC-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
32 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
400 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
520 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
EF
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
25 S
पतन समय:
168 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
144 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
272 ns
सामान्य टर्न-अन ढिलाइ समय:
59 ns
Tags
SIHG, SIH
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
भाग # Mfg। विवरण स्टक मूल्य
SIHG80N60EF-GE3
DISTI # V72:2272_22759366		Vishay IntertechnologiesE Series Power MOSFET With Fast Body Diode TO247AC, 32 m @ 10V498
  • 250:$10.5370
  • 100:$11.2929
  • 25:$12.5940
  • 10:$13.9700
  • 1:$14.9860
SIHG80N60EF-GE3
DISTI # SIHG80N60EF-GE3-ND		Vishay SiliconixMOSFET E SERIES 600V TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		525In Stock
  • 500:$10.7900
  • 100:$12.1294
  • 25:$13.7664
  • 10:$14.3620
  • 1:$15.6300
SIHG80N60EF-GE3
DISTI # 31629500		Vishay IntertechnologiesE Series Power MOSFET With Fast Body Diode TO247AC, 32 m @ 10V498
  • 250:$10.5370
  • 100:$11.2929
  • 25:$12.5940
  • 10:$13.9700
  • 1:$14.9860
SIHG80N60EF-GE3
DISTI # SIHG80N60EF-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHG80N60EF-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$8.9900
  • 3000:$9.2900
  • 2000:$9.5900
  • 1000:$9.9900
  • 500:$10.2900
SIHG80N60EF-GE3
DISTI # 99AC9561		Vishay IntertechnologiesMOSFET, N-CH, 80A, 600V, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes44
  • 500:$10.3700
  • 250:$11.0900
  • 100:$12.1600
  • 50:$12.5200
  • 25:$13.2400
  • 10:$14.3100
  • 1:$15.7500
SIHG80N60EF-GE3
DISTI # 78-SIHG80N60EF-GE3		Vishay IntertechnologiesMOSFET 650V Vds,30V Vgs TO-247AC
RoHS: Compliant		472
  • 1:$15.5900
  • 10:$14.1700
  • 25:$13.1100
  • 50:$12.4000
  • 100:$12.0400
  • 250:$10.9800
  • 500:$10.2700
SIHG80N60EF-GE3
DISTI # 3019094		Vishay IntertechnologiesMOSFET, N-CH, 80A, 600V, TO-247AC46
  • 100:£8.7200
  • 50:£8.9900
  • 10:£9.5000
  • 5:£11.3000
  • 1:£11.6500
SIHG80N60EF-GE3
DISTI # 3019094		Vishay IntertechnologiesMOSFET, N-CH, 80A, 600V, TO-247AC
RoHS: Compliant		44
  • 250:$13.8100
  • 100:$14.1100
  • 50:$14.4000
  • 10:$14.7100
  • 5:$16.3400
  • 1:$17.1200
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Mfr.#: MCP1501T-12E/CHY

OMO.#: OMO-MCP1501T-12E-CHY

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Mfr.#: FFSH4065A

OMO.#: OMO-FFSH4065A

 Schottky Diodes & Rectifiers 650V 40A SIC SBD
ISL29501IRZ-T7A

Mfr.#: ISL29501IRZ-T7A

OMO.#: OMO-ISL29501IRZ-T7A

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Mfr.#: BME680

OMO.#: OMO-BME680

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Mfr.#: VOF-6B-S12

OMO.#: OMO-VOF-6B-S12

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Mfr.#: MMC5883MA

OMO.#: OMO-MMC5883MA

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Mfr.#: ISL29501IRZ-T7A

OMO.#: OMO-ISL29501IRZ-T7A-INTERSIL

 ISL29501IRZ TOF SIGNAL PROCESS
UIPMA150I472XCB

Mfr.#: UIPMA150I472XCB

OMO.#: OMO-UIPMA150I472XCB-VISHAY

 DISPLACEMENT SENSOR, ULTRAFLAT
VOF-15B-S12

Mfr.#: VOF-15B-S12

OMO.#: OMO-VOF-15B-S12-CUI

 AC/DC CONVERTER 12V 15W
उपलब्धता
स्टक:
473
अर्डर मा:
2456
मात्रा प्रविष्ट गर्नुहोस्:
SIHG80N60EF-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १५.५९
US$ १५.५९
10
US$ १४.१७
US$ १४१.७०
25
US$ १३.११
US$ ३२७.७५
50
US$ १२.४०
US$ ६२०.००
100
US$ १२.०४
US$ १ २०४.००
250
US$ १०.९८
US$ २ ७४५.००
500
US$ १०.२७
US$ ५ १३५.००
1000
US$ ९.४२
US$ ९ ४२०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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