AS4C16M32SC-7TINTR

Mfr. #:: AS4C16M32SC-7TINTR
निर्माता:: Alliance Memory
विवरण:: DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: AS4C16M32SC-7TINTR डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: AS4C16M32SC-7TINTR थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: गठबन्धन मेमोरी

उत्पादन कोटि:: DRAM

RoHS:: Y

प्रकार:: SDRAM

डाटा बस चौडाइ:: 32 bit

संगठन:: 16 M x 32

प्याकेज / केस:: TSOP-86

मेमोरी साइज:: 512 Mbit

अधिकतम घडी आवृत्ति:: 143 MHz

आपूर्ति भोल्टेज - अधिकतम:: 3.6 V

आपूर्ति भोल्टेज - न्यूनतम:: 3 V

न्यूनतम परिचालन तापमान:: - 40 C

अधिकतम परिचालन तापमान:: + 85 C

शृङ्खला:: AS4C16M32SC

प्याकेजिङ:: रील

ब्रान्ड:: गठबन्धन मेमोरी

माउन्टिङ शैली:: SMD/SMT

नमी संवेदनशील:: हो

उत्पादन प्रकार:: DRAM

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: मेमोरी र डाटा भण्डारण

Tags: AS4C16M3, AS4C16M, AS4C16, AS4C1, AS4C, AS4

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AS4C16M32SC-7TINTR थप जानकारी

AS4C Series SDRAM: Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: AS4C16M32MSA-6BINTR OMO.#: OMO-AS4C16M32MSA-6BINTR	DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
	Mfr.#: AS4C16M32MD1-5BINTR OMO.#: OMO-AS4C16M32MD1-5BINTR	DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
	Mfr.#: AS4C16M32MD1-5BCNTR OMO.#: OMO-AS4C16M32MD1-5BCNTR	DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
	Mfr.#: AS4C16M32MSA-6BIN OMO.#: OMO-AS4C16M32MSA-6BIN	DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
	Mfr.#: AS4C16M32MS-7BCN OMO.#: OMO-AS4C16M32MS-7BCN	DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
	Mfr.#: AS4C16M32MD1-5BINTR OMO.#: OMO-AS4C16M32MD1-5BINTR-ALLIANCE-MEMORY	DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
	Mfr.#: AS4C16M32MD1-5BCNTR OMO.#: OMO-AS4C16M32MD1-5BCNTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 90FBGA
	Mfr.#: AS4C16M32SC-7TIN OMO.#: OMO-AS4C16M32SC-7TIN-ALLIANCE-MEMORY	512MB SDR 16M x 32 3.3V 54PIN TSOP II 133 MHZ
	Mfr.#: AS4C16M32MS-7BCNTR OMO.#: OMO-AS4C16M32MS-7BCNTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 90FBGA
	Mfr.#: AS4C16M32MSA-6BINTR OMO.#: OMO-AS4C16M32MSA-6BINTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 90FBGA

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
मात्रा प्रविष्ट गर्नुहोस्:

AS4C16M32SC-7TINTR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

बाट सुरु गर्नुहोस्

AS4C16M3 12
AS4C16M 67
AS4C16 69
AS4C1 244
AS4C 824
AS4 1355

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AS4C16M32SC-7TINTR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes