FQB4N80TM

Mfr. #:: FQB4N80TM
निर्माता:: ON Semiconductor / Fairchild
विवरण:: MOSFET 800V N-Channel QFET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: FQB4N80TM डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: ON अर्धचालक

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 800 V

आईडी - निरन्तर ड्रेन वर्तमान:: 3.9 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 3.6 Ohms

Vgs - गेट-स्रोत भोल्टेज:: 30 V

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 3.13 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: रील

उचाइ:: 4.83 mm

लम्बाइ:: 10.67 mm

शृङ्खला:: FQB4N80

ट्रान्जिस्टर प्रकार:: 1 N-Channel

प्रकार:: MOSFET

चौडाइ:: 9.65 mm

ब्रान्ड:: सेमीकन्डक्टर / फेयरचाइल्डमा

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 3.8 S

पतन समय:: 35 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 45 ns

कारखाना प्याक मात्रा:: 800

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 35 ns

सामान्य टर्न-अन ढिलाइ समय:: 16 ns

एकाइ वजन:: 0.046296 oz

Tags: FQB4N, FQB4, FQB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQB4N80TM विवरण

***ark: MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V

***ure Electronics: N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3

***et Europe: Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:130W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
FQB4N80TM DISTI # V72:2272_06301137	ON Semiconductor	N-CH/800V/3.9A/3.6OHM	520	500:$0.8658 250:$0.9806 100:$1.0187 25:$1.3024 10:$1.3043 1:$1.5051
FQB4N80TM DISTI # FQB4N80TMCT-ND	ON Semiconductor	MOSFET N-CH 800V 3.9A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	803In Stock	100:$1.2683 10:$1.5780 1:$1.7500
FQB4N80TM DISTI # FQB4N80TMDKR-ND	ON Semiconductor	MOSFET N-CH 800V 3.9A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	803In Stock	100:$1.2683 10:$1.5780 1:$1.7500
FQB4N80TM DISTI # FQB4N80TMTR-ND	ON Semiconductor	MOSFET N-CH 800V 3.9A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$0.9084
FQB4N80TM DISTI # 30703250	ON Semiconductor	N-CH/800V/3.9A/3.6OHM	3200	9600:$0.6421 2400:$0.6673 800:$0.7530
FQB4N80TM DISTI # 29055410	ON Semiconductor	N-CH/800V/3.9A/3.6OHM	520	500:$0.8658 250:$0.9806 100:$1.0187 25:$1.3024 12:$1.3043
FQB4N80TM DISTI # FQB4N80TM	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.5649 1600:$0.5609 3200:$0.5539 4800:$0.5469 8000:$0.5339
FQB4N80TM DISTI # FQB4N80TM	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€0.8359 1600:€0.6839 3200:€0.6269 4800:€0.5779 8000:€0.5369
FQB4N80TM DISTI # FQB4N80TM	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0	800:$0.6872 1600:$0.6608 2400:$0.6363 4000:$0.6136 8000:$0.5925 20000:$0.5727 40000:$0.5633
FQB4N80TM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2400	1000:$1.0300 500:$1.0800 100:$1.1300 25:$1.1800 1:$1.2700
FQB4N80TM DISTI # 512-FQB4N80TM	ON Semiconductor	MOSFET 800V N-Channel QFET RoHS: Compliant	1036	1:$1.6400 10:$1.4000 100:$1.0700 500:$0.9460 800:$0.7470 2400:$0.6620 9600:$0.6370
FQB4N80TM DISTI # 6710908P	ON Semiconductor	MOSFET N-CHANNEL 800V 3.9A D2PAK, RL	854	5:£0.5000
FQB4N80TM	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 800
FQB4N80TM DISTI # C1S541901511368	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	3200	2400:$0.6880 1600:$0.8310 800:$0.8990
FQB4N80TM DISTI # C1S541901596147	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	520	250:$0.9806 100:$1.0187 25:$1.3024 10:$1.3043
FQB4N80TM DISTI # 2453890RL	ON Semiconductor	MOSFET, N-CH, 800V, 3.9A, TO-263AB-3 RoHS: Compliant	0	1:$2.6000 10:$2.2200 100:$1.7000 500:$1.5100 800:$1.1900 2400:$1.0500 9600:$1.0100
FQB4N80TM DISTI # 2453890	ON Semiconductor	MOSFET, N-CH, 800V, 3.9A, TO-263AB-3 RoHS: Compliant	0	1:$2.6000 10:$2.2200 100:$1.7000 500:$1.5100 800:$1.1900 2400:$1.0500 9600:$1.0100

सम्बन्धित उत्पादनहरु

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	Mfr.#: LT3751EFE#PBF OMO.#: OMO-LT3751EFE-PBF	Switching Voltage Regulators Capacitor Charger Controller with Low Noise Regulation
	Mfr.#: CRCW0603330RFKEAC OMO.#: OMO-CRCW0603330RFKEAC	Thick Film Resistors - SMD 1/10Watt 330ohms 1% Commercial Use
	Mfr.#: GRM31CR61E476ME44K OMO.#: OMO-GRM31CR61E476ME44K-MURATA-ELECTRONICS	Multilayer Ceramic Capacitors MLCC - SMD/SMT
	Mfr.#: CRCW0603330RFKEAC OMO.#: OMO-CRCW0603330RFKEAC-VISHAY-DALE	D11/CRCW0603-C 100 330R 1% ET1
	Mfr.#: C0603X104K5RACTU OMO.#: OMO-C0603X104K5RACTU-1105	Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.1uF 10% X7R
	Mfr.#: DS3680D OMO.#: OMO-DS3680D-TEXAS-INSTRUMENTS	IC QUAD PHONE RELAY DRVR 14-SOIC
	Mfr.#: C0603C105K4PAC7411 OMO.#: OMO-C0603C105K4PAC7411-1190	Multilayer Ceramic Capacitors MLCC - SMD/SMT 16volts 1uF X5R 10%
	Mfr.#: TPD3E001DRLR OMO.#: OMO-TPD3E001DRLR-TEXAS-INSTRUMENTS	ESD Suppressors Low-Cap 3Ch ESD Protection Array

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

FQB4N80TM को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.६४~~; ~~US$ १.६४~~

10: ~~US$ १.४०~~; ~~US$ १४.००~~

100: ~~US$ १.०७~~; ~~US$ १०७.००~~

500: ~~US$ ०.९५~~; ~~US$ ४७३.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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FQB4N80TM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes