SQJ968EP-T1_GE3

Mfr. #:: SQJ968EP-T1_GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET Dual N-Channel 60V AEC-Q101 Qualified
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SQJ968EP-T1_GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SQJ968EP-T1_GE3 Datasheet SQJ968EP-T1_GE3 Datasheet (P4-P6)SQJ968EP-T1_GE3 Datasheet (P7-P9)SQJ968EP-T1_GE3 Datasheet (P10-P12)
ECAD Model:
थप जानकारी:: SQJ968EP-T1_GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8L-4

च्यानलहरूको संख्या:: 2 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 60 V

आईडी - निरन्तर ड्रेन वर्तमान:: 23.5 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 28 mOhms, 28 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.5 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 18.5 nC, 18.5 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 42 W

कन्फिगरेसन:: दोहोरो

च्यानल मोड:: वृद्धि

योग्यता:: AEC-Q101

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

शृङ्खला:: SQ

ट्रान्जिस्टर प्रकार:: 2 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 16 S, 16 S

पतन समय:: 6.5 ns, 6.5 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 9 ns, 9 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 19.5 ns, 19.5 ns

सामान्य टर्न-अन ढिलाइ समय:: 8 ns, 8 ns

एकाइ वजन:: 0.017870 oz

Tags: SQJ968, SQJ96, SQJ9, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJ968EP-T1_GE3 मूल्याङ्कन र समीक्षाहरू

A***n

Did not reach

2019-03-23

J***o

Fast

2019-01-11

M***v

All working. Packed was good. Thank you very much to the seller!

2019-01-12

SQJ968EP-T1_GE3 विवरण

***ark: Mosfet Transistor, Dual N Channel, 18 A, 60 V, 0.028 Ohm, 10 V, 2 V

***ment14 APAC: MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8

***ronik: DUAL 60V 18A 37mOhm PPSO-8L RoHSconf

SQJ968EP-T1_GE3 थप जानकारी

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SQJ968EP-T1-GE3 DISTI # V36:1790_14140430	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) 175C	0	3000000:$0.3927 1500000:$0.3952 300000:$0.6026 30000:$0.9606 3000:$1.0200
SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1964In Stock	1000:$0.4672 500:$0.5918 100:$0.7164 10:$0.9190 1:$1.0300
SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.3871 6000:$0.4022 3000:$0.4234
SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 18A 8-Pin SO T/R (Alt: SQJ968EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 12000	30000:€0.3949 18000:€0.4129 12000:€0.4669 6000:€0.5759 3000:€0.8029
SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 18A 8-Pin SO T/R - Tape and Reel (Alt: SQJ968EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3689 18000:$0.3789 12000:$0.3899 6000:$0.4059 3000:$0.4189
SQJ968EP-T1_GE3 DISTI # 78-SQJ968EP-T1_GE3	Vishay Intertechnologies	MOSFET Dual N-Channel 60V AEC-Q101 Qualified RoHS: Compliant	4840	1:$1.1300 10:$1.0000 100:$0.7980 500:$0.6180 1000:$0.4880 3000:$0.4420 6000:$0.4200 9000:$0.4050
SQJ968EP-T1-GE3 DISTI # 2400405	Vishay Intertechnologies	MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8 RoHS: Compliant	0	9000:$0.8530 3000:$0.8820 1000:$0.9140 500:$0.9840 250:$1.1400 100:$1.3100 10:$1.6500 1:$2.0500
SQJ968EP-T1-GE3 DISTI # 2400405	Vishay Intertechnologies	MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8 RoHS: Compliant	363	500:£0.4880 250:£0.5590 100:£0.6300 10:£0.8530 1:£1.0200
SQJ968EP-T1_GE3 DISTI # XSKDRABV0027385	Vishay Intertechnologies	RoHS: Compliant	9000 in Stock0 on Order	9000:$0.5520 3000:$0.5914
SQJ968EPT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	15000
SQJ968EP-T1_GE3 DISTI # TMOS1159	Vishay Intertechnologies	Dual N-CH 60V 33,6mOhm SO-8L RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.4340

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: LT1910ES8#PBF OMO.#: OMO-LT1910ES8-PBF	Gate Drivers Protected Hi Side MOSFET Drvr
	Mfr.#: LTC2875HDD#PBF OMO.#: OMO-LTC2875HDD-PBF	CAN Interface IC 4Mbps, 60V Fault Protected, 3.3V/5V CAN Transceiver
	Mfr.#: ADUM1250ARZ OMO.#: OMO-ADUM1250ARZ	Digital Isolators Hot Swappable Dual I2C
	Mfr.#: LTC4414EMS8#PBF OMO.#: OMO-LTC4414EMS8-PBF	Power Management Specialized - PMIC 36V, L Loss PwrPath Cntr for Lrg PFETs
	Mfr.#: LT8606IDC#TRPBF OMO.#: OMO-LT8606IDC-TRPBF	Switching Voltage Regulators 42V, 350mA Synchronous Step-Down Regulator with 2.5 A Quiescent Current
	Mfr.#: MCP1711T-33I/OT OMO.#: OMO-MCP1711T-33I-OT	LDO Voltage Regulators Capless Ultra Low IQ LDO
	Mfr.#: MCP1711T-33I/OT OMO.#: OMO-MCP1711T-33I-OT-MICROCHIP-TECHNOLOGY	IC REG LINEAR 3.3V 150MA SOT23-5
	Mfr.#: ADUM1250ARZ OMO.#: OMO-ADUM1250ARZ-ANALOG-DEVICES-INC-ADI	Digital Isolators Hot Swappable Dual I2C

उपलब्धता

स्टक:: Available
अर्डर मा:: 1987
मात्रा प्रविष्ट गर्नुहोस्:

SQJ968EP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.१३~~; ~~US$ १.१३~~

10: ~~US$ १.००~~; ~~US$ १०.००~~

100: ~~US$ ०.८०~~; ~~US$ ७९.८०~~

500: ~~US$ ०.६२~~; ~~US$ ३०९.००~~

1000: ~~US$ ०.४९~~; ~~US$ ४८८.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SQJ968 4
SQJ96 15
SQJ9 53
SQJ 248

नवीनतम उत्पादनहरू

SUM70101EL 100 V P-Channel MOSFET

Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
Compare SQJ968EP-T1_GE3

SQJ960EP vs SQJ960EPT1GE3 vs SQJ960EPT1GE3CUTTAPE
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products