IPW65R190CFD

IPW65R190CFD
Mfr. #:
IPW65R190CFD
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPW65R190CFD डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPW65R190CFD थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
17.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
190 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
68 nC
Pd - शक्ति अपव्यय:
151 W
कन्फिगरेसन:
एकल
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
उचाइ:
21.1 mm
लम्बाइ:
16.13 mm
शृङ्खला:
CoolMOS CFD2
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.21 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
6.4 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8.4 ns
कारखाना प्याक मात्रा:
240
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPW65R190CFDFKSA1 IPW65R19CFDXK SP000905376
एकाइ वजन:
1.340411 oz
Tags
IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Switch Mode Power Supplies (SMPS)
Infineon Technologies offers a wide range of cost-effective products for consumer Switch Mode Power Supplies (SMPS). This includes high voltage MOSFETs, control IC's and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.Learn More
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
Infineon SMPS - High Power Topology
Infineon Technologies SMPS High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (eg. 12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power application for reasons such as its inherent Zero Voltage Switching for the primary side switches.Learn More
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPW65R190CFD
DISTI # 30610570
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247
RoHS: Compliant
514
  • 480:$2.8178
  • 100:$2.9707
  • 50:$3.3915
  • 10:$4.0163
  • 6:$4.4880
IPW65R190CFDAFKSA1
DISTI # 31039088
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
480
  • 100:$3.3600
  • 10:$3.8784
IPW65R190CFDFKSA1
DISTI # IPW65R190CFDFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1200:$2.1893
  • 720:$2.5513
  • 240:$3.0942
  • 10:$3.7200
  • 1:$4.1400
IPW65R190CFDAFKSA1
DISTI # IPW65R190CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Temporarily Out of Stock
  • 240:$4.0468
IPW65R190CFD
DISTI # C1S322000415991
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
514
  • 480:$2.2100
  • 100:$2.3300
  • 50:$2.6600
  • 10:$3.1500
  • 1:$3.5200
IPW65R190CFD
DISTI # IPW65R190CFD
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 (Alt: IPW65R190CFD)
RoHS: Compliant
Min Qty: 240
Asia - 240
  • 240:$2.1092
  • 480:$2.0087
  • 720:$1.9773
  • 1200:$1.8888
  • 2400:$1.8610
  • 6000:$1.8079
  • 12000:$1.7576
IPW65R190CFD
DISTI # IPW65R190CFDFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R190CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$1.7900
  • 480:$1.6900
  • 960:$1.5900
  • 1440:$1.5900
  • 2400:$1.5900
IPW65R190CFD
DISTI # SP000905376
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 (Alt: SP000905376)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.5900
  • 50:€1.5900
  • 100:€1.4900
  • 500:€1.4900
  • 1000:€1.3900
IPW65R190CFDFKSA2
DISTI # IPW65R190CFDFKSA2
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R190CFDFKSA2)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDA
    Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA)
    RoHS: Compliant
    Min Qty: 240
    Asia - 0
      IPW65R190CFDAFKSA1
      DISTI # IPW65R190CFDAFKSA1
      Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube
      Americas - 0
      • 240:$2.4900
      • 480:$2.3900
      • 960:$2.3900
      • 1440:$2.2900
      • 2400:$2.1900
      IPW65R190CFDAFKSA1
      DISTI # SP000928268
      Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928268)
      RoHS: Compliant
      Min Qty: 1
      Europe - 0
      • 1:€3.0900
      • 10:€2.4900
      • 25:€2.2900
      • 50:€2.1900
      • 100:€2.0900
      • 500:€2.0900
      • 1000:€1.9900
      IPW65R190CFDFKSA1
      DISTI # 85X6044
      Infineon Technologies AGMOSFET Transistor, N Channel, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V , RoHS Compliant: Yes0
        IPW65R190CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant
        240
        • 1000:$2.7100
        • 500:$2.8500
        • 100:$2.9700
        • 25:$3.0900
        • 1:$3.3300
        IPW65R190CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant
        6
        • 1000:$1.9100
        • 500:$2.0100
        • 100:$2.1000
        • 25:$2.1900
        • 1:$2.3500
        IPW65R190CFD
        DISTI # 726-IPW65R190CFD
        Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
        RoHS: Compliant
        0
        • 1:$3.3500
        • 10:$2.8500
        • 100:$2.4700
        IPW65R190CFDFKSA2
        DISTI # 726-IPW65R190CFDFKSA
        Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
        RoHS: Compliant
        0
        • 1:$3.3500
        • 10:$2.8500
        • 100:$2.4700
        IPW65R190CFDAFKSA1
        DISTI # 726-IPW65R190CFDAFKS
        Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
        RoHS: Compliant
        187
        • 1:$4.7600
        • 10:$4.0400
        • 100:$3.5000
        IPW65R190CFDA
        DISTI # 726-IPW65R190CFDA
        Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
        RoHS: Compliant
        11
        • 1:$4.7600
        • 10:$4.0400
        • 100:$3.5000
        IPW65R190CFDAFKSA1
        DISTI # 8577129
        Infineon Technologies AGMOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU480
        • 240:£1.6600
        • 1200:£1.6270
        IPW65R190CFDFKSA1
        DISTI # 9064384P
        Infineon Technologies AGMOSFET N-CH 650V 17.5A COOLMOS TO247, TU96
        • 20:£1.9900
        • 80:£1.7700
        • 200:£1.6380
        • 400:£1.6050
        IPW65R190CFDFKSA1
        DISTI # 9064384
        Infineon Technologies AGMOSFET N-CH 650V 17.5A COOLMOS TO247, PK200
        • 4:£2.3950
        • 20:£1.9900
        • 80:£1.7700
        • 200:£1.6380
        • 400:£1.6050
        IPW65R190CFDFKSA1
        DISTI # IPW65R190CFDFKSA1
        Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,17.5A,151W,PG-TO247-348
        • 1:$3.6900
        • 3:$3.1900
        • 10:$2.5600
        • 30:$2.2300
        IPW65R190CFDFKSA1
        DISTI # 2443410
        Infineon Technologies AGMOSFET, N CH, 700V, 17.5A, TO-247-3
        RoHS: Compliant
        0
        • 1:$5.3100
        • 10:$4.5100
        • 100:$3.9100
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        उपलब्धता
        स्टक:
        470
        अर्डर मा:
        2453
        मात्रा प्रविष्ट गर्नुहोस्:
        IPW65R190CFD को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ३.३५
        US$ ३.३५
        10
        US$ २.८४
        US$ २८.४०
        100
        US$ २.४६
        US$ २४६.००
        250
        US$ २.३४
        US$ ५८५.००
        500
        US$ २.१०
        US$ १ ०५०.००
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