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SISS72DN-T1-GE3

SISS72DN-T1-GE3
Mfr. #:
SISS72DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISS72DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISS72DN-T1-GE3 DatasheetSISS72DN-T1-GE3 Datasheet (P4-P6)SISS72DN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SISS72DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK1212-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
आईडी - निरन्तर ड्रेन वर्तमान:
25.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
42 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
22 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
65.8 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, ThunderFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIS
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
16 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
6 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
Tags
SISS7, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SISS7xDN TrenchFET MOSFETs
Vishay SISS7xDN-T1-GE3 TrenchFET MOSFETs use TrenchFET® with ThunderFET technology that optimizes the balance of RDS, QG, QSW, and QOSS. These MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SISS7xDN TrenchFET MOSFETs find applications in primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switches. These MOSFETs are available in PowerPAK 1212-8S package.
भाग # Mfg। विवरण स्टक मूल्य
SISS72DN-T1-GE3
DISTI # V99:2348_22587806		Vishay IntertechnologiesN-Channel 150 V (D-S) MOSFET PowerPAK 1212-8S 33M dual trench 2 mil , 42 m @ 10V m @ 7.5V m @ 4.5V0
    SISS72DN-T1-GE3
    DISTI # SISS72DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 150V
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 6000:$0.7182
    • 3000:$0.7272
    SISS72DN-T1-GE3
    DISTI # SISS72DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 150V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.8045
    • 500:$0.9709
    • 100:$1.1817
    • 10:$1.4700
    • 1:$1.6400
    SISS72DN-T1-GE3
    DISTI # SISS72DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 150V
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.8045
    • 500:$0.9709
    • 100:$1.1817
    • 10:$1.4700
    • 1:$1.6400
    SISS72DN-T1-GE3
    DISTI # SISS72DN-T1-GE3    		Vishay Intertechnologies- Tape and Reel (Alt: SISS72DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.6569
    • 30000:$0.6749
    • 18000:$0.6949
    • 12000:$0.7239
    • 6000:$0.7459
    SISS72DN-T1-GE3
    DISTI # 81AC3508    		Vishay IntertechnologiesN-CHANNEL 150-V (D-S) MOSFET0
    • 10000:$0.6420
    • 6000:$0.6670
    • 4000:$0.6930
    • 2000:$0.7700
    • 1000:$0.8110
    • 1:$0.8620
    SISS72DN-T1-GE3
    DISTI # 99AC9594    		Vishay IntertechnologiesMOSFET, N-CH, 150V, 25.5A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:25.5A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes40
    • 500:$0.9070
    • 250:$0.9690
    • 100:$1.0300
    • 50:$1.1300
    • 25:$1.2300
    • 10:$1.3300
    • 1:$1.6100
    SISS72DN-T1-GE3
    DISTI # 78-SISS72DN-T1-GE3    		Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		0
    • 1:$1.5900
    • 10:$1.3200
    • 100:$1.0200
    • 500:$0.8980
    • 1000:$0.7440
    • 3000:$0.6930
    • 6000:$0.6670
    • 9000:$0.6420
    SISS72DN-T1-GE3
    DISTI # 3019145    		Vishay IntertechnologiesMOSFET, N-CH, 150V, 25.5A, 150DEG C
    RoHS: Compliant    		40
    • 5000:$0.9320
    • 1000:$0.9640
    • 500:$1.1900
    • 250:$1.3100
    • 100:$1.4200
    • 25:$1.8300
    • 5:$2.0000
    SISS72DN-T1-GE3
    DISTI # 3019145    		Vishay IntertechnologiesMOSFET, N-CH, 150V, 25.5A, 150DEG C40
    • 500:£0.6580
    • 250:£0.7060
    • 100:£0.7540
    • 25:£0.9790
    • 5:£1.0700
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4000
    मात्रा प्रविष्ट गर्नुहोस्:
    SISS72DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.५९
    US$ १.५९
    10
    US$ १.३२
    US$ १३.२०
    100
    US$ १.०२
    US$ १०२.००
    500
    US$ ०.९०
    US$ ४४९.००
    1000
    US$ ०.७४
    US$ ७४४.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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