SGP23N60UFTU

Mfr. #:: SGP23N60UFTU
निर्माता:: ON Semiconductor / Fairchild
विवरण:: IGBT Transistors Dis High Perf IGBT
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SGP23N60UFTU डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: ON अर्धचालक

उत्पादन कोटि:: IGBT ट्रान्जिस्टरहरू

RoHS:: Y

प्रविधि:: सि

प्याकेज / केस:: TO-220-3

माउन्टिङ शैली:: प्वाल मार्फत

कन्फिगरेसन:: एकल

कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:: 600 V

कलेक्टर-एमिटर संतृप्ति भोल्टेज:: 2.1 V

अधिकतम गेट एमिटर भोल्टेज:: 20 V

25 C मा निरन्तर कलेक्टर वर्तमान:: 23 A

Pd - शक्ति अपव्यय:: 100 W

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

शृङ्खला:: SGP23N60UF

प्याकेजिङ:: ट्यूब

निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:: 23 A

उचाइ:: 9.4 mm

लम्बाइ:: 10.1 mm

चौडाइ:: 4.7 mm

ब्रान्ड:: सेमीकन्डक्टर / फेयरचाइल्डमा

निरन्तर कलेक्टर वर्तमान:: 23 A

गेट-एमिटर चुहावट वर्तमान:: +/- 100 nA

उत्पादन प्रकार:: IGBT ट्रान्जिस्टरहरू

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: IGBTs

भाग # उपनाम:: SGP23N60UFTU_NL

एकाइ वजन:: 0.063493 oz

Tags: SGP23N60U, SGP23, SGP2, SGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SGP23N60UFTU विवरण

***ical: Trans IGBT Chip N=-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail

***ure Electronics: SGP23N60UF Series 600 V 23 A Flange Mount PT IGBT - TO-220-3

***r Electronics: Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***el Electronic: STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins

***icroelectronics: N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

***ure Electronics: STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ure Electronics: STGP Series IGBT Low On State Through Hole IGBT - TO-220-3

***nell: IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***Yang: IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3

***ow.cn: Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ineon SCT: Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SGP23N60UFTU DISTI # 26699654	ON Semiconductor	PTTIGBT TO220 12A 600V	11000	1000:$1.5048
SGP23N60UFTU DISTI # SGP23N60UFTU-ND	ON Semiconductor	IGBT 600V 23A 100W TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	926In Stock	5000:$1.2125 3000:$1.2277 1000:$1.3186 100:$1.9370 25:$2.2736 10:$2.4100 1:$2.6800
SGP23N60UFTU DISTI # V36:1790_06359286	ON Semiconductor	PTTIGBT TO220 12A 600V	0
SGP23N60UFTU DISTI # SGP23N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail (Alt: SGP23N60UFTU) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.9919 500:€1.0069 100:€1.0229 50:€1.0389 25:€1.1439 10:€1.3389 1:€1.6369
SGP23N60UFTU DISTI # SGP23N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFTU) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$1.2900 1000:$1.3900 2000:$1.3900 4000:$1.3900 6000:$1.3900
SGP23N60UFTU DISTI # SGP23N60UFTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: SGP23N60UFTU) RoHS: Compliant Min Qty: 199 Container: Bulk	Americas - 0	995:$1.4900 1990:$1.4900 199:$1.5900 398:$1.5900 597:$1.5900
SGP23N60UFTU DISTI # 83C0928	ON Semiconductor	TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,23A I(C),TO-220AB ROHS COMPLIANT: YES	0	10000:$1.1900 2500:$1.2500 1000:$1.3500 500:$1.6100 100:$1.8300 10:$2.2500 1:$2.7700
SGP23N60UFTU	ON Semiconductor	SGP23N60UF Series 600 V 23 A Flange Mount PT IGBT - TO-220-3 RoHS: Compliant	300Tube	50:$1.7800 100:$1.4000 250:$1.3400 500:$1.2900
SGP23N60UFTU DISTI # 512-SGP23N60UFTU	ON Semiconductor	IGBT Transistors Dis High Perf IGBT RoHS: Compliant	1204	1:$2.5400 10:$2.1600 100:$1.7300 500:$1.5100 1000:$1.2500
SGP23N60UFTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	2741	1000:$1.6600 500:$1.7500 100:$1.8200 25:$1.9000 1:$2.0400
SGP23N60UFTU DISTI # 8022238	ON Semiconductor	IGBTFAIRCHILDSGP23N60UFTU, PK	55	50:£0.8240 5:£0.8440
SGP23N60UFTU DISTI # 8022238P	ON Semiconductor	IGBTFAIRCHILDSGP23N60UFTU, TU	510	50:£0.8240
SGP23N60UFTU DISTI # SGP23N60UFTU	ON Semiconductor	Transistor: IGBT,600V,12A,100W,TO220-3	854	1:$2.0200 5:$1.8200 25:$1.6000 100:$1.4400
SGP23N60UFTU DISTI # XSFP00000015535	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 3.7AI(D),30V, 2-Element, N-Channel and P-Channel,Silicon,Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	162 in Stock0 on Order	162:$2.5500 72:$2.8000
SGP23N60UFTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	Europe - 7

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: PWD13F60 OMO.#: OMO-PWD13F60	Gate Drivers High-density power driver - high voltage full bridge with integrated gate driver
	Mfr.#: FSBB15CH60D OMO.#: OMO-FSBB15CH60D	Motor / Motion / Ignition Controllers & Drivers 600V/15A SPM3 V5
	Mfr.#: LDL1117S33R OMO.#: OMO-LDL1117S33R	LDO Voltage Regulators POWER MANAGEMENT
	Mfr.#: SEN-14686 OMO.#: OMO-SEN-14686	Multiple Function Sensor Development Tools SparkFun VR IMU Breakout - BNO080 (Qwiic)
	Mfr.#: LDL1117S33R OMO.#: OMO-LDL1117S33R-STMICROELECTRONICS	IC REG LINEAR 3.3V 1.2A SOT223
	Mfr.#: RS6-1212S OMO.#: OMO-RS6-1212S-RECOM-POWER	Module DC-DC 12VIN 1-OUT 12V 0.5A 6W 7-Pin SIP Module Tube
	Mfr.#: FSBB15CH60D OMO.#: OMO-FSBB15CH60D-ON-SEMICONDUCTOR	Motor / Motion / Ignition Controllers & Drivers 600V/15A SPM3 V5
	Mfr.#: ROE-1205S OMO.#: OMO-ROE-1205S-RECOM-POWER	DC to DC Converter Modules
	Mfr.#: CRV1D1212SC OMO.#: OMO-CRV1D1212SC-MURATA-POWER-SOLUTIONS	DC/DC TH 1W 5-5V SIP DUAL
	Mfr.#: PWD13F60 OMO.#: OMO-PWD13F60-STMICROELECTRONICS	POWER DRIVER

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

SGP23N60UFTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.५४~~; ~~US$ २.५४~~

10: ~~US$ २.१६~~; ~~US$ २१.६०~~

100: ~~US$ १.७३~~; ~~US$ १७३.००~~

500: ~~US$ १.५१~~; ~~US$ ७५५.००~~

1000: ~~US$ १.२५~~; ~~US$ १ २५०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SGP23N60U 6
SGP23 8
SGP2 19
SGP 167

नवीनतम उत्पादनहरू

Gate Drivers

The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
NCP137 700 mA LDO Regulators

ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
NCP114 Low Dropout Regulators

ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
LC717A00AR Touch Sensor

These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
Compare SGP23N60UFTU

SGP23N60UF vs SGP23N60UFD vs SGP23N60UFDG23N60UFD
FDMQ86530L Quad-MOSFET

ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.

More Newest Products

SGP23N60UFTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes