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SISH129DN-T1-GE3

SISH129DN-T1-GE3
Mfr. #:
SISH129DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISH129DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISH129DN-T1-GE3 DatasheetSISH129DN-T1-GE3 Datasheet (P4-P6)SISH129DN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SISH129DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
35 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
11.4 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.8 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
71 nC
न्यूनतम परिचालन तापमान:
- 50 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
52.1 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIS
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
37 S
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
43 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns
सामान्य टर्न-अन ढिलाइ समय:
50 ns
Tags
SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
भाग # Mfg। विवरण स्टक मूल्य
SISH129DN-T1-GE3
DISTI # SISH129DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		50In Stock
  • 1000:$0.4359
  • 500:$0.5521
  • 100:$0.6684
  • 10:$0.8570
  • 1:$0.9600
SISH129DN-T1-GE3
DISTI # SISH129DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		50In Stock
  • 1000:$0.4359
  • 500:$0.5521
  • 100:$0.6684
  • 10:$0.8570
  • 1:$0.9600
SISH129DN-T1-GE3
DISTI # SISH129DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.3762
  • 3000:$0.3950
SISH129DN-T1-GE3
DISTI # SISH129DN-T1-GE3		Vishay IntertechnologiesP-CHANEL 30 V (D-S) MOSFET11.4 MO @ 10V MO @ 7.5V 20 MO @ 4.5V - Tape and Reel (Alt: SISH129DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.3439
  • 30000:$0.3539
  • 18000:$0.3639
  • 12000:$0.3789
  • 6000:$0.3909
SISH129DN-T1-GE3
DISTI # 59AC7449		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.3420
  • 6000:$0.3500
  • 4000:$0.3630
  • 2000:$0.4030
  • 1000:$0.4440
  • 1:$0.4630
SISH129DN-T1-GE3
DISTI # 78AC6531		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0095ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.8V,Power RoHS Compliant: Yes6000
  • 500:$0.5160
  • 250:$0.5580
  • 100:$0.6000
  • 50:$0.6610
  • 25:$0.7210
  • 10:$0.7820
  • 1:$0.9490
SISH129DN-T1-GE3
DISTI # 78-SISH129DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		6000
  • 1:$0.9300
  • 10:$0.7730
  • 100:$0.5930
  • 500:$0.5100
  • 1000:$0.4030
  • 3000:$0.3760
  • 6000:$0.3570
  • 9000:$0.3430
  • 24000:$0.3330
SISH129DN-T1-GE3
DISTI # 1783695		Vishay IntertechnologiesP-CHANEL 30 V (D-S) MOSFET POWERPAK 1212, RL6000
  • 3000:£0.2800
SISH129DN-T1-GE3
DISTI # 2932958		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C6000
  • 500:£0.3750
  • 250:£0.4050
  • 100:£0.4340
  • 25:£0.5680
  • 5:£0.6350
SISH129DN-T1-GE3
DISTI # 2932958		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C
RoHS: Compliant		6000
  • 1000:$0.6150
  • 500:$0.6490
  • 250:$0.7650
  • 100:$0.9270
  • 10:$1.1900
  • 1:$1.4400
छवि भाग # विवरण
FDC6561AN

Mfr.#: FDC6561AN

OMO.#: OMO-FDC6561AN

 MOSFET SSOT-6 N-CH 30V
T520B227M006ATE045

Mfr.#: T520B227M006ATE045

OMO.#: OMO-T520B227M006ATE045

 Tantalum Capacitors - Polymer SMD 6.3V 220uF 1311 20% ESR=45mOhms
EMK316BJ226KL-T

Mfr.#: EMK316BJ226KL-T

OMO.#: OMO-EMK316BJ226KL-T-TAIYO-YUDEN

 Multilayer Ceramic Capacitors MLCC - SMD/SMT STD 1206 X5R 16V 22uF 10%
FPS009-2305-0

Mfr.#: FPS009-2305-0

OMO.#: OMO-FPS009-2305-0-404

 Memory Connectors Memory Card Connectors SD MEM CARD CON PSH/PSH SMT
FDC6561AN

Mfr.#: FDC6561AN

OMO.#: OMO-FDC6561AN-ON-SEMICONDUCTOR

 MOSFET 2N-CH 30V 2.5A SSOT6
TG1G-S032NYLF

Mfr.#: TG1G-S032NYLF

OMO.#: OMO-TG1G-S032NYLF-1136

 Audio & Signal Transformers Transformers Audio & Signal ISO MOD SMD GullWing GigE 10/100BASE-TX
T520B227M006ATE045

Mfr.#: T520B227M006ATE045

OMO.#: OMO-T520B227M006ATE045-KEMET

 Tantalum Capacitors - Polymer SMD 220uF 6.3 Volts 20% ESR = 45
उपलब्धता
स्टक:
Available
अर्डर मा:
1989
मात्रा प्रविष्ट गर्नुहोस्:
SISH129DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.९३
US$ ०.९३
10
US$ ०.७७
US$ ७.७३
100
US$ ०.५९
US$ ५९.३०
500
US$ ०.५१
US$ २५५.००
1000
US$ ०.४०
US$ ४०३.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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