BSZ900N15NS3GATMA1

BSZ900N15NS3GATMA1
Mfr. #:
BSZ900N15NS3GATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSZ900N15NS3GATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ900N15NS3GATMA1 DatasheetBSZ900N15NS3GATMA1 Datasheet (P4-P6)BSZ900N15NS3GATMA1 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
BSZ900N15NS3GATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TSDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
आईडी - निरन्तर ड्रेन वर्तमान:
13 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
74 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
7 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
38 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.1 mm
लम्बाइ:
3.3 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
3.3 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
6 S
पतन समय:
3 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
4 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
8 ns
सामान्य टर्न-अन ढिलाइ समय:
4 ns
भाग # उपनाम:
BSZ900N15NS3 BSZ9N15NS3GXT G SP000677866
एकाइ वजन:
0.001349 oz
Tags
BSZ900N1, BSZ9, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 90 mOhm 5 nC OptiMOS™ Power Mosfet - TSDSON-8
***p One Stop Japan
Trans MOSFET N-CH 150V 13A Automotive 8-Pin TSDSON EP T/R
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TSDSON-8, RoHS
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
भाग # Mfg। विवरण स्टक मूल्य
BSZ900N15NS3GATMA1
DISTI # V72:2272_06384545
Infineon Technologies AGTrans MOSFET N-CH 150V 13A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
1467
  • 1000:$0.4966
  • 500:$0.6384
  • 250:$0.6576
  • 100:$0.7307
  • 25:$0.8541
  • 10:$1.0439
  • 1:$1.2203
BSZ900N15NS3GATMA1
DISTI # V36:1790_06384545
Infineon Technologies AGTrans MOSFET N-CH 150V 13A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.3976
  • 2500000:$0.3979
  • 500000:$0.4234
  • 50000:$0.4690
  • 5000:$0.4766
BSZ900N15NS3GATMA1
DISTI # BSZ900N15NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 150V 13A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4707In Stock
  • 1000:$0.5537
  • 500:$0.7013
  • 100:$0.8490
  • 10:$1.0890
  • 1:$1.2200
BSZ900N15NS3GATMA1
DISTI # BSZ900N15NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 150V 13A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4707In Stock
  • 1000:$0.5537
  • 500:$0.7013
  • 100:$0.8490
  • 10:$1.0890
  • 1:$1.2200
BSZ900N15NS3GATMA1
DISTI # BSZ900N15NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 150V 13A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.4587
  • 5000:$0.4766
BSZ900N15NS3GATMA1
DISTI # 31651713
Infineon Technologies AGTrans MOSFET N-CH 150V 13A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
1467
  • 13:$1.2203
BSZ900N15NS3GATMA1
DISTI # SP000677866
Infineon Technologies AGTrans MOSFET N-CH 150V 13A 8-Pin TSDSON T/R (Alt: SP000677866)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.4349
  • 30000:€0.4639
  • 20000:€0.5109
  • 10000:€0.5709
  • 5000:€0.7319
BSZ900N15NS3GXT
DISTI # BSZ900N15NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 150V 13A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ900N15NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.4329
  • 30000:$0.4409
  • 20000:$0.4559
  • 10000:$0.4739
  • 5000:$0.4909
BSZ900N15NS3GATMA1
DISTI # 50Y1837
Infineon Technologies AGMOSFET, N-CH, 150V, 13A, 150DEG C, 38W,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes4000
  • 1000:$0.5690
  • 500:$0.7210
  • 250:$0.7680
  • 100:$0.8150
  • 50:$0.8980
  • 25:$0.9800
  • 10:$1.0600
  • 1:$1.2400
BSZ900N15NS3GATMA1
DISTI # 726-BSZ900N15NS3GATM
Infineon Technologies AGMOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
RoHS: Compliant
13512
  • 1:$1.1200
  • 10:$0.9560
  • 100:$0.7340
  • 500:$0.6490
  • 1000:$0.5120
  • 5000:$0.4540
  • 10000:$0.4370
BSZ900N15NS3 G
DISTI # 726-BSZ900N15NS3G
Infineon Technologies AGMOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
RoHS: Compliant
8581
  • 1:$1.1200
  • 10:$0.9560
  • 100:$0.7340
  • 500:$0.6490
  • 1000:$0.5120
  • 5000:$0.4540
  • 10000:$0.4370
BSZ900N15NS3GATMA1
DISTI # 8986886P
Infineon Technologies AGMOSFET N-CHANNEL 150V 13A OPTIMOS TSDSON, RL16730
  • 1250:£0.3580
  • 500:£0.4260
  • 250:£0.4830
  • 50:£0.5560
BSZ900N15NS3GATMA1
DISTI # 2480789
Infineon Technologies AGMOSFET, N-CH, 150V, 13A, TSDSON-827744
  • 500:£0.5050
  • 250:£0.5380
  • 100:£0.5710
  • 10:£0.8020
  • 1:£0.9930
BSZ900N15NS3GATMA1
DISTI # 2480789
Infineon Technologies AGMOSFET, N-CH, 150V, 13A, TSDSON-8
RoHS: Compliant
24654
  • 5000:$0.6980
  • 1000:$0.7880
  • 500:$0.9980
  • 100:$1.1400
  • 10:$1.4700
  • 1:$1.7300
BSZ900N15NS3GATMA1
DISTI # 2480789RL
Infineon Technologies AGMOSFET, N-CH, 150V, 13A, TSDSON-8
RoHS: Compliant
0
  • 5000:$0.6980
  • 1000:$0.7880
  • 500:$0.9980
  • 100:$1.1400
  • 10:$1.4700
  • 1:$1.7300
छवि भाग # विवरण
SDT5H100LP5-7

Mfr.#: SDT5H100LP5-7

OMO.#: OMO-SDT5H100LP5-7

Schottky Diodes & Rectifiers Schottky Rectifier
BSC059N04LS6ATMA1

Mfr.#: BSC059N04LS6ATMA1

OMO.#: OMO-BSC059N04LS6ATMA1

MOSFET
TPS23754PWPR

Mfr.#: TPS23754PWPR

OMO.#: OMO-TPS23754PWPR

Power Switch ICs - POE / LAN Hi Pwr/Hi Eff PoE Inter & DC/DC Cntrlr
SGP30-2.5K

Mfr.#: SGP30-2.5K

OMO.#: OMO-SGP30-2-5K-SENSIRION

AIR QUALITY GAS SENSOR FOR VOC'S
LMR23630DRRT

Mfr.#: LMR23630DRRT

OMO.#: OMO-LMR23630DRRT-TEXAS-INSTRUMENTS

IC REG BUCK ADJUSTABLE 3A 12SON
SDT5H100LP5-7

Mfr.#: SDT5H100LP5-7

OMO.#: OMO-SDT5H100LP5-7-DIODES

DIODE SCHOTTKY 100V 5A POWERDI5
TPS23754PWPR

Mfr.#: TPS23754PWPR

OMO.#: OMO-TPS23754PWPR-TEXAS-INSTRUMENTS

Power Switch ICs - POE / LAN Hi Pwr/Hi Eff PoE Inter & DC/DC Cntrl
ERJ-2RKF5361X

Mfr.#: ERJ-2RKF5361X

OMO.#: OMO-ERJ-2RKF5361X-PANASONIC

Thick Film Resistors - SMD 0402 5.36Kohms 1% Tol
BSC059N04LS6ATMA1

Mfr.#: BSC059N04LS6ATMA1

OMO.#: OMO-BSC059N04LS6ATMA1-INFINEON-TECHNOLOGIES

TRENCH <= 40V
उपलब्धता
स्टक:
14
अर्डर मा:
1997
मात्रा प्रविष्ट गर्नुहोस्:
BSZ900N15NS3GATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.१२
US$ १.१२
10
US$ ०.९६
US$ ९.५६
100
US$ ०.७३
US$ ७३.४०
500
US$ ०.६५
US$ ३२४.५०
1000
US$ ०.५१
US$ ५१२.००
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