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Si4459BDY-T1-GE3

Si4459BDY-T1-GE3
Mfr. #:
Si4459BDY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET -30V Vds 16V Vgs SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
Si4459BDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
Si4459BDY-T1-GE3 DatasheetSi4459BDY-T1-GE3 Datasheet (P4-P6)Si4459BDY-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
Si4459BDY-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
27.8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.6 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
56 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
5.6 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 P-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
81 S
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
6 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
39 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
Tags
Si4459, SI445, SI44, SI4
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
भाग # Mfg। विवरण स्टक मूल्य
SI4459BDY-T1-GE3
DISTI # V72:2272_21688054		Vishay IntertechnologiesSI4459BDY-T1-GE34861
  • 75000:$0.4521
  • 30000:$0.4577
  • 15000:$0.4632
  • 6000:$0.4688
  • 3000:$0.4743
  • 1000:$0.4895
  • 500:$0.6054
  • 250:$0.6627
  • 100:$0.7180
  • 50:$0.8568
  • 25:$0.9520
  • 10:$1.0681
  • 1:$1.2840
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30V SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2344In Stock
  • 1000:$0.5516
  • 500:$0.6986
  • 100:$0.8457
  • 10:$1.0850
  • 1:$1.2100
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30V SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2344In Stock
  • 1000:$0.5516
  • 500:$0.6986
  • 100:$0.8457
  • 10:$1.0850
  • 1:$1.2100
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30V SO-8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.4570
  • 5000:$0.4748
  • 2500:$0.4998
SI4459BDY-T1-GE3
DISTI # 29568925		Vishay IntertechnologiesSI4459BDY-T1-GE34861
  • 15000:$0.4632
  • 6000:$0.4688
  • 3000:$0.4743
  • 1000:$0.4895
  • 500:$0.6054
  • 250:$0.6627
  • 100:$0.7180
  • 50:$0.8568
  • 25:$0.9520
  • 15:$1.0681
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SI4459BDY-T1-GE3)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4349
  • 25000:$0.4469
  • 15000:$0.4599
  • 10000:$0.4799
  • 5000:$0.4939
SI4459BDY-T1-GE3
DISTI # 56AC6588		Vishay IntertechnologiesMOSFET, P-CH, -30V, -27.8A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-27.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,Power RoHS Compliant: Yes4362
  • 500:$0.6530
  • 250:$0.7060
  • 100:$0.7600
  • 50:$0.8360
  • 25:$0.9130
  • 10:$0.9900
  • 1:$1.2000
SI4459BDY-T1-GE3
DISTI # 59AC7481		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4320
  • 6000:$0.4420
  • 4000:$0.4590
  • 2000:$0.5100
  • 1000:$0.5610
  • 1:$0.5850
Si4459BDY-T1-GE3
DISTI # 78-SI4459BDY-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 16V Vgs SO-8
RoHS: Compliant		5077
  • 1:$1.1800
  • 10:$0.9790
  • 100:$0.7510
  • 500:$0.6460
  • 1000:$0.5090
  • 2500:$0.4750
  • 5000:$0.4520
  • 10000:$0.4350
SI4459BDY-T1-GE3
DISTI # 2857064		Vishay IntertechnologiesMOSFET, P-CH, -30V, -27.8A, SOIC
RoHS: Compliant		4362
  • 1000:$0.8320
  • 500:$1.0600
  • 100:$1.2800
  • 5:$1.6400
SI4459BDY-T1-GE3
DISTI # 2857064		Vishay IntertechnologiesMOSFET, P-CH, -30V, -27.8A, SOIC4441
  • 500:£0.5040
  • 250:£0.5450
  • 100:£0.5850
  • 10:£0.8200
  • 1:£1.0600
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उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
Si4459BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
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US$ १.१८
10
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100
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500
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1000
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