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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SPD02N60S5BTMA1 DISTI # SPD02N60S5BTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPD02N60S5BTMA1 DISTI # SPD02N60S5BTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPD02N60S5BTMA1 DISTI # SPD02N60S5BTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SPD02N60S5 DISTI # SPD02N60S5 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R - Bulk (Alt: SPD02N60S5) RoHS: Not Compliant Min Qty: 736 Container: Bulk | Americas - 0 |
|
| SPD02N60S5BTMA1 DISTI # SPD02N60S5BTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R - Bulk (Alt: SPD02N60S5BTMA1) Min Qty: 736 Container: Bulk | Americas - 0 |
|
| SPD02N60S5 DISTI # 62M0133 | Infineon Technologies AG | MOSFET, N CHANNEL, 600V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V RoHS Compliant: Yes | 0 | |
| SPD02N60S5BTMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| SPD02N60S5 DISTI # 726-SPD02N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5 RoHS: Compliant | 0 | |
| SPD02N60S5 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 440 |
|
| SPD02N60S5BTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 15970 |
|
| SPD02N60S5 | Infineon Technologies AG | 292 | ||
| SPD02N60S5 DISTI # 1471786 | Infineon Technologies AG | MOSFET, N, 600V, D-PAK RoHS: Compliant | 0 |
|
| SPD02N60S5 DISTI # 1471786RL | Infineon Technologies AG | MOSFET, N, 600V, D-PAK RoHS: Compliant | 0 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: SPD02N60S5 OMO.#: OMO-SPD02N60S5-126 |
IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5 |
|
|
Mfr.#: SPD02N60 OMO.#: OMO-SPD02N60-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SPD02N60C3 OMO.#: OMO-SPD02N60C3-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: SPD02N60C3,02N60C3 OMO.#: OMO-SPD02N60C3-02N60C3-1190 |
नयाँ र मौलिक |
|
Mfr.#: SPD02N60C3BTMA1 |
MOSFET N-CH 650V 1.8A DPAK |
|
|
Mfr.#: SPD02N60C3_05 OMO.#: OMO-SPD02N60C3-05-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SPD02N60C5 OMO.#: OMO-SPD02N60C5-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SPD02N60S5 02N60S5 OMO.#: OMO-SPD02N60S5-02N60S5-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SPD02N60S5BTMA1 |
MOSFET N-CH 600V 1.8A TO-252 |
