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SPD02N60C3

SPD02N60C3
Mfr. #:
SPD02N60C3
निर्माता:
Rochester Electronics, LLC
विवरण:
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SPD02N60C3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
INFINEON
उत्पादन कोटि
FETs - एकल
शृङ्खला
CoolMOS C3
प्याकेजिङ
रील
अंश-उपनामहरू
SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT
एकाइ - वजन
0.139332 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
CoolMOS
प्याकेज-केस
TO-252-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
25 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
12 ns
उदय-समय
3 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
1.8 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
600 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
3 Ohms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
68 ns
सामान्य-टर्न-अन-डिले-समय
6 ns
च्यानल-मोड
वृद्धि
Tags
SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252 T/R
***p One Stop Global
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R
***ark
Mosfet, N Channel, 650V, 1.8A, To-252-3
***i-Key
MOSFET N-CH 650V 1.8A DPAK
***ronik
N-CH 600V 1.8A 3000mOhm TO252-3
***ponent Sense
TRA POWER SPD02N60C3 DPAK-3
***et
LOW POWER_PRICE/PERFORM
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***nell
MOSFET, N, COOLMOS, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Iar:1.8A; Corrente Id Max:1.8A; Corrente Idss Max:1µA; Corrente di Impulso Idm:5.4A; Dissipazione di Potenza Ptot Max:25W; Energia Max Avalanche Repetitiva:0.07mJ; Energia Singolo Impulso Avalanche Eas:50mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:D-PAK; No. di Transistor:1; Resistenza Stato On Max:3ohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C
***ment14 APAC
Prices include import duty and tax. MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:Surface Mount Device; Voltage Vds Typ:650V
भाग # Mfg। विवरण स्टक मूल्य
SPD02N60C3BTMA1
DISTI # 26943265		Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		15000
  • 10000:$0.4689
  • 5000:$0.4909
  • 2500:$0.5512
SPD02N60C3BTMA1
DISTI # SPD02N60C3BTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 1.8A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SPD02N60C3BTMA1
    DISTI # SPD02N60C3BTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 1.8A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPD02N60C3BTMA1
      DISTI # C1S322000355848      		Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		15000
      • 2500:$0.5440
      SPD02N60C3BTMA1
      DISTI # 59M2072      		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
        SPD02N60C3Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
        RoHS: Compliant        		6
        • 1000:$0.4400
        • 500:$0.4600
        • 100:$0.4800
        • 25:$0.5000
        • 1:$0.5400
        SPD02N60C3
        DISTI # 726-SPD02N60C3        		Infineon Technologies AGMOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3
        RoHS: Compliant        		0
          SPD02N60C3Infineon Technologies AG 
          RoHS: Compliant          		Europe - 445
            SPD02N60C3BTMA1
            DISTI # 1156419RL            		Infineon Technologies AGMOSFET, N, COOLMOS, D-PAK
            RoHS: Compliant            		0
            • 1:$1.5700
            • 10:$1.3300
            • 100:$1.0200
            • 500:$0.8980
            • 1000:$0.7080
            • 2500:$0.6280
            • 10000:$0.6040
            • 25000:$0.6030
            SPD02N60C3BTMA1
            DISTI # 1156419            		Infineon Technologies AGMOSFET, N, COOLMOS, D-PAK
            RoHS: Compliant            		0
            • 1:$1.5700
            • 10:$1.3300
            • 100:$1.0200
            • 500:$0.8980
            • 1000:$0.7080
            • 2500:$0.6280
            • 10000:$0.6040
            • 25000:$0.6030
            छवि भाग # विवरण
            SPD02N60C3BTMA1

            Mfr.#: SPD02N60C3BTMA1

            OMO.#: OMO-SPD02N60C3BTMA1

            		 MOSFET LOW POWER_LEGACY
            SPD02N60S5

            Mfr.#: SPD02N60S5

            OMO.#: OMO-SPD02N60S5-126

            		 IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
            SPD02N50C3

            Mfr.#: SPD02N50C3

            OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES

            		 IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
            SPD02N80C3

            Mfr.#: SPD02N80C3

            OMO.#: OMO-SPD02N80C3-126

            		 IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
            SPD02N80C3BTMA1

            Mfr.#: SPD02N80C3BTMA1

            OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 800V 2A TO-252
            SPD02N50C3BTMA1

            Mfr.#: SPD02N50C3BTMA1

            OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES

            		 LOW POWER_LEGACY
            SPD02N60

            Mfr.#: SPD02N60

            OMO.#: OMO-SPD02N60-1190

            		 नयाँ र मौलिक
            SPD02N60C3BTMA1

            Mfr.#: SPD02N60C3BTMA1

            OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 650V 1.8A DPAK
            SPD02N80C3.

            Mfr.#: SPD02N80C3.

            OMO.#: OMO-SPD02N80C3--1190

            		 नयाँ र मौलिक
            SPD02U60C3

            Mfr.#: SPD02U60C3

            OMO.#: OMO-SPD02U60C3-1190

            		 नयाँ र मौलिक
            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            3000
            मात्रा प्रविष्ट गर्नुहोस्:
            SPD02N60C3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
            सन्दर्भ मूल्य (USD)
            मात्रा
            एकाइ मूल्य
            विस्तार मूल्य
            1
            US$ ०.६०
            US$ ०.६०
            10
            US$ ०.५७
            US$ ५.७०
            100
            US$ ०.५४
            US$ ५४.००
            500
            US$ ०.५१
            US$ २५५.००
            1000
            US$ ०.४८
            US$ ४८०.००
            2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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