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RQ3E070BNTB

RQ3E070BNTB
Mfr. #:
RQ3E070BNTB
निर्माता:
Rohm Semiconductor
विवरण:
MOSFET 4.5V Drive Nch MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RQ3E070BNTB डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
RQ3E070BNTB थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
HSMT-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
20 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
8.9 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
ROHM अर्धचालक
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
4 S
पतन समय:
5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
23 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns
भाग # उपनाम:
RQ3E070BN
एकाइ वजन:
0.196723 oz
Tags
RQ3E070, RQ3E07, RQ3E0, RQ3E, RQ3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 7 A, 30 V, 0.02 ohm, 10 V, 2.5 V RoHS Compliant: Yes
***et
Trans MOSFET N-CH 30V ±7A 8-Pin HSMT Embossed Tape and Reel
***nell
MOSFET, N-CH, 30V, 7A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power D
***ure Electronics
Dual N-Channel 30 V 0.0195 Ohm 5 W Surface Mount Mosfet - SOIC-8
***ark
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N-CH, 30V, 8.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
*** Source Electronics
Trans MOSFET N-CH 30V 8.2A 6-Pin TSOP T/R / MOSFET N-CH 30V 8.2A 6TSOP
***ure Electronics
Single N-Channel 30 V 29 mOhm 4.8 nC HEXFET® Power Mosfet - SC-74
***nell
MOSFET, N CHANNEL, HEXFET, 30V, 8.2A, TSOP-6
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.2A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***(Formerly Allied Electronics)
SI3410DV-T1-GE3 N-channel MOSFET Transistor; 8 A; 30 V; 6-Pin TSOP
***ure Electronics
Si3410DV Series 30 V 19.5 mOhm Surface Mount N-Channel MOSFET - TSOP-6
*** Source Electronics
MOSFET N-CH 30V 8A 6-TSOP / Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R
***roFlash
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***nell
MOSFET, N-CH, 30V, 8A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 4.1W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
***ical
Trans MOSFET N-CH 30V 8A Automotive 3-Pin SOT-23
***nsix Microsemi
Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N-CH, 30V, 8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
***ure Electronics
N-Channel 30 V 22 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SMD, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Source Voltage Vds:30V; On Resistance
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SMD, 8-SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 8.4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.9V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R
***nell
MOSFET, NN, SO-8; Module Configuration:Dual N Channel; Transistor Polarity:Dual N; Max Current Id:7.1A; Max Voltage Vds:30V; On State Resistance:0.028ohm; Rds Measurement Voltage:10V; Typ Voltage Vgs th:3V; Power Dissipation:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; Case Style:SOIC; Termination Type:SMD; Transistor Type:MOSFET; Cont Current Id:7.1A; Max Voltage Vgs:20V; Min Voltage Vgs th:1V; On State Resistance @ Vgs = 4.5V:0.045ohm; On State resistance @ Vgs = 10V:0.028ohm; Pulse Current Idm:33.6A; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
भाग # Mfg। विवरण स्टक मूल्य
RQ3E070BNTB
DISTI # RQ3E070BNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 7A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1201In Stock
  • 1000:$0.1133
  • 500:$0.1473
  • 100:$0.2153
  • 10:$0.3460
  • 1:$0.4600
RQ3E070BNTB
DISTI # RQ3E070BNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 7A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1201In Stock
  • 1000:$0.1133
  • 500:$0.1473
  • 100:$0.2153
  • 10:$0.3460
  • 1:$0.4600
RQ3E070BNTB
DISTI # RQ3E070BNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 7A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 75000:$0.0732
  • 30000:$0.0798
  • 15000:$0.0853
  • 6000:$0.0935
  • 3000:$0.0990
RQ3E070BNTB
DISTI # RQ3E070BNTB		ROHM SemiconductorTrans MOSFET N-CH 30V ±7A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E070BNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.0699
  • 18000:$0.0719
  • 12000:$0.0759
  • 6000:$0.0809
  • 3000:$0.0869
RQ3E070BNTB
DISTI # RQ3E070BNTB		ROHM SemiconductorTrans MOSFET N-CH 30V ±7A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E070BNTB)
RoHS: Compliant
Min Qty: 1
Container: Reel		Europe - 0
  • 1000:€0.0979
  • 500:€0.1049
  • 100:€0.1139
  • 50:€0.1239
  • 25:€0.1519
  • 10:€0.1959
  • 1:€0.2739
RQ3E070BNTB
DISTI # 755-RQ3E070BNTB		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant		0
  • 1:$0.4500
  • 10:$0.3120
  • 100:$0.1440
  • 1000:$0.1100
  • 3000:$0.0940
  • 9000:$0.0860
  • 24000:$0.0800
  • 45000:$0.0720
  • 99000:$0.0690
RQ3E070BNTBROHM Semiconductor 50
  • 27:$0.5700
  • 6:$0.7600
  • 1:$0.9500
RQ3E070BNTBROHM Semiconductor 100
  • 1:¥3.9535
  • 100:¥2.2416
  • 1500:¥1.4212
  • 3000:¥1.0588
RQ3E070BNTB..
DISTI # 2490607		ROHM SemiconductorMOSFET, N-CH, 30V, 7A, HSMT-80
  • 500:£0.1000
  • 250:£0.1100
  • 100:£0.1140
  • 25:£0.2600
  • 5:£0.2710
RQ3E070BNTB..
DISTI # 2490607		ROHM SemiconductorMOSFET, N-CH, 30V, 7A, HSMT-8
RoHS: Compliant		0
  • 1000:$0.1830
  • 500:$0.1940
  • 250:$0.2240
  • 100:$0.2650
  • 10:$0.3240
  • 1:$0.3730
RQ3E070BNTBROHM SemiconductorRoHS(ship within 1day)63
  • 1:$0.7300
  • 10:$0.4300
  • 50:$0.2700
  • 100:$0.2300
  • 500:$0.2000
  • 1000:$0.1900
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उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
RQ3E070BNTB को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.४५
US$ ०.४५
10
US$ ०.३१
US$ ३.१२
100
US$ ०.१४
US$ १४.४०
1000
US$ ०.११
US$ ११०.००
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