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IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1
Mfr. #:
IPP60R170CFD7XKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET HIGH POWER_NEW
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPP60R170CFD7XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPP60R170CFD7XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
14 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
144 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
28 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
75 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
शृङ्खला:
CoolMOS CFD7
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
15 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
68 ns
सामान्य टर्न-अन ढिलाइ समय:
31 ns
भाग # उपनाम:
IPP60R170CFD7 SP001617974
Tags
IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 220-3
***ark
Mosfet, N-Ch, 600V, 14A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPP60R170CFD7XKSA1
DISTI # V36:1790_18787591		Infineon Technologies AGHIGH POWER_NEW0
    IPP60R170CFD7XKSA1
    DISTI # V99:2348_18787591    		Infineon Technologies AGHIGH POWER_NEW0
      IPP60R170CFD7XKSA1
      DISTI # IPP60R170CFD7XKSA1-ND      		Infineon Technologies AGMOSFET N-CH TO220-3
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		1856In Stock
      • 5000:$1.3707
      • 2500:$1.3879
      • 500:$1.7991
      • 100:$2.1898
      • 25:$2.5700
      • 10:$2.7240
      • 1:$3.0300
      IPP60R170CFD7XKSA1
      DISTI # IPP60R170CFD7XKSA1      		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 220-3 - Rail/Tube (Alt: IPP60R170CFD7XKSA1)
      RoHS: Compliant
      Min Qty: 500
      Container: Tube      		Americas - 0
      • 3000:$1.1900
      • 5000:$1.1900
      • 1000:$1.2900
      • 2000:$1.2900
      • 500:$1.3900
      IPP60R170CFD7XKSA1
      DISTI # 43AC9327      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
      • 5000:$1.4500
      • 2500:$1.4900
      • 1000:$1.5800
      • 500:$1.8700
      • 100:$2.1000
      • 10:$2.5700
      • 1:$2.9900
      IPP60R170CFD7XKSA1
      DISTI # 726-IPP60R170CFD7XKS      		Infineon Technologies AGMOSFET HIGH POWER_NEW
      RoHS: Compliant      		500
      • 1:$2.8800
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4200
      IPP60R170CFD7XKSA1
      DISTI # 2807979      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220
      RoHS: Compliant      		960
      • 1000:$1.9600
      • 500:$2.0100
      • 250:$2.1100
      • 100:$2.2300
      • 10:$2.5300
      • 1:$2.7000
      IPP60R170CFD7XKSA1
      DISTI # 2807979      		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-220960
      • 500:£1.2400
      • 250:£1.3400
      • 100:£1.4300
      • 10:£1.7900
      • 1:£2.3800
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      उपलब्धता
      स्टक:
      430
      अर्डर मा:
      2413
      मात्रा प्रविष्ट गर्नुहोस्:
      IPP60R170CFD7XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ २.८८
      US$ २.८८
      10
      US$ २.४४
      US$ २४.४०
      100
      US$ १.९५
      US$ १९५.००
      500
      US$ १.७१
      US$ ८५५.००
      1000
      US$ १.४२
      US$ १ ४२०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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