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FQU2N60CTU

FQU2N60CTU
Mfr. #:
FQU2N60CTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 600V N-Channel Adv Q-FET C-Series
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FQU2N60CTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
1.9 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.7 Ohms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
6.3 mm
लम्बाइ:
6.8 mm
शृङ्खला:
FQU2N60C
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
MOSFET
चौडाइ:
2.5 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
5 S
पतन समय:
28 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
25 ns
कारखाना प्याक मात्रा:
5040
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
एकाइ वजन:
0.012102 oz
Tags
FQU2N60C, FQU2N60, FQU2N6, FQU2N, FQU2, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 1.9 A, 600 V, 3-Pin IPAK ON Semiconductor FQU2N60CTU
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK
***itex
Transistor N-MOSFET FQU2N60CTU, IPAK, Fairchild
***ure Electronics
N-Channel 600 V 4.7 Ohm Through Hole Power Mosfet - IPAK-3
***p One Stop Global
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
***ser
MOSFETs 600V N-Channel Adv Q-FET C-Series
*** Source Electronics
MOSFET N-CH 600V 1.9A IPAK
***ark
Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; Operating Temperature Max:150�C; Product Range:QFET Series; Automotive Qualification Standard:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
भाग # Mfg। विवरण स्टक मूल्य
FQU2N60CTU
DISTI # 33614281		ON SemiconductorQFC 600V 4.7OHM IPAK3498
  • 33:$0.3107
FQU2N60CTU
DISTI # FQU2N60CTU-ND		ON SemiconductorMOSFET N-CH 600V 1.9A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		37In Stock
  • 5000:$0.3670
  • 2500:$0.3863
  • 500:$0.5243
  • 100:$0.6347
  • 25:$0.7728
  • 10:$0.8140
  • 1:$0.9100
FQU2N60CTU
DISTI # V36:1790_06359742		ON SemiconductorQFC 600V 4.7OHM IPAK0
  • 5040000:$0.2706
  • 2520000:$0.2714
  • 504000:$0.4406
  • 50400:$0.8375
  • 5040:$0.9100
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 430
  • 50400:$0.2949
  • 30240:$0.3019
  • 20160:$0.3059
  • 10080:$0.3099
  • 5040:$0.3119
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 834
Container: Bulk		Americas - 0
  • 8340:$0.3699
  • 4170:$0.3789
  • 2502:$0.3839
  • 1668:$0.3889
  • 834:$0.3919
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.2829
  • 500:€0.3049
  • 100:€0.3309
  • 50:€0.3609
  • 25:€0.3969
  • 10:€0.4409
  • 1:€0.4959
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 5040		Asia - 0
  • 252000:$0.3746
  • 126000:$0.3808
  • 50400:$0.3940
  • 25200:$0.4080
  • 15120:$0.4232
  • 10080:$0.4394
  • 5040:$0.4570
FQU2N60CTU.
DISTI # 60AC9683		ON SemiconductorContinuous Drain Current Id:1.9A,Drain Source Voltage Vds:600V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
  • 50400:$0.2860
  • 30240:$0.2940
  • 20160:$0.2970
  • 10080:$0.3010
  • 1:$0.3030
FQU2N60CTU
DISTI # 512-FQU2N60CTU		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
RoHS: Compliant		4617
  • 1:$0.9300
  • 10:$0.7990
  • 100:$0.6140
  • 500:$0.5430
  • 1000:$0.4290
  • 2500:$0.3800
  • 10000:$0.3660
FQU2N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		42125
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
FQU2N60CTU
DISTI # 6715357		ON SemiconductorMOSFET N-CHANNEL 600V 1.9A IPAK, PK80
  • 250:£0.4020
  • 100:£0.4360
  • 25:£0.4740
  • 5:£0.5160
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उपलब्धता
स्टक:
Available
अर्डर मा:
1987
मात्रा प्रविष्ट गर्नुहोस्:
FQU2N60CTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८६
US$ ०.८६
10
US$ ०.७४
US$ ७.३५
100
US$ ०.५६
US$ ५६.५०
500
US$ ०.५०
US$ २४९.५०
1000
US$ ०.३९
US$ ३९४.००
2500
US$ ०.३५
US$ ८७२.५०
10000
US$ ०.३४
US$ ३ ३६०.००
25000
US$ ०.३२
US$ ८ १२५.००
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