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BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
निर्माता:
Rohm Semiconductor
विवरण:
MOSFET 2N-CH 1200V 120A MODULE
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSM120D12P2C005 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSM120D12P2C005 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
रोहम सेमीकन्डक्टर
उत्पादन कोटि
FETs - arrays
शृङ्खला
BSM120D12P2C005
उत्पादन
पावर सेमीकन्डक्टर मोड्युलहरू
टाइप गर्नुहोस्
SiC पावर मोड्युल
प्याकेजिङ
थोक
माउन्टिङ-शैली
पेंच
सञ्चालन-तापमान-दायरा
- 40 C to + 150 C
प्याकेज-केस
मोड्युल
सञ्चालन - तापक्रम
-40°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
*
आपूर्तिकर्ता-उपकरण-प्याकेज
मोड्युल
कन्फिगरेसन
आधा पुल
FET-प्रकार
2 N-Channel (Half Bridge)
पावर-अधिकतम
780W
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
1200V (1.2kV)
इनपुट-Capacitance-Ciss-Vds
14000pF @ 10V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
120A
Rds-on-max-Id-Vgs
-
Vgs-th-max-Id
2.7V @ 22mA
गेट-चार्ज-Qg-Vgs
-
Tags
BSM1, BSM
Service Guarantees

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
भाग # Mfg। विवरण स्टक मूल्य
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005		ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk		Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005		ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant		0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472		ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant		0
  • 1:£371.0000
  • 5:£307.0000
छवि भाग # विवरण
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005

 Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005-ROHM-SEMI

 MOSFET 2N-CH 1200V 120A MODULE
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
BSM120D12P2C005 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४७२.०४
US$ ४७२.०४
10
US$ ४४८.४३
US$ ४ ४८४.३३
100
US$ ४२४.८३
US$ ४२ ४८३.१५
500
US$ ४०१.२३
US$ २०० ६१४.९०
1000
US$ ३७७.६३
US$ ३७७ ६२८.००
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