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RGT8NS65DGC9

RGT8NS65DGC9
Mfr. #:
RGT8NS65DGC9
निर्माता:
Rohm Semiconductor
विवरण:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RGT8NS65DGC9 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
RGT8NS65DGC9 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-262-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.65 V
अधिकतम गेट एमिटर भोल्टेज:
30 V
25 C मा निरन्तर कलेक्टर वर्तमान:
8 A
Pd - शक्ति अपव्यय:
65 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
ROHM अर्धचालक
गेट-एमिटर चुहावट वर्तमान:
200 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
50
उपश्रेणी:
IGBTs
भाग # उपनाम:
RGT8NS65D(TO-262)
Tags
RGT8N, RGT8, RGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 8A 65000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 8A 65000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 8A, 175Deg C, 65W; Dc Collector Current:8A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Operatingrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 8A, 175DEG C, 65W; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 8A, 175°C, 65W; Corrente di Collettore CC:8A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:65W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
छवि भाग # विवरण
RGT8NS65DGC9

Mfr.#: RGT8NS65DGC9

OMO.#: OMO-RGT8NS65DGC9

 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGT8NS65DGTL

Mfr.#: RGT8NS65DGTL

OMO.#: OMO-RGT8NS65DGTL

 IGBT Transistors 650V 4A IGBT Stop Trench
RGT8NS65DGTL

Mfr.#: RGT8NS65DGTL

OMO.#: OMO-RGT8NS65DGTL-ROHM-SEMI

 IGBT Transistors 650V 4A Field Stop Trench IGBT
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
RGT8NS65DGC9 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.७२
US$ १.७२
10
US$ १.४७
US$ १४.७०
100
US$ १.१७
US$ ११७.००
500
US$ १.०२
US$ ५१०.००
1000
US$ ०.८५
US$ ८५२.००
2500
US$ ०.७९
US$ १ ९८२.५०
5000
US$ ०.७६
US$ ३ ८२०.००
10000
US$ ०.७४
US$ ७ ३५०.००
बाट सुरु गर्नुहोस्
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