GS8161E32DGT-333IV

GS8161E32DGT-333IV
Mfr. #:
GS8161E32DGT-333IV
निर्माता:
GSI Technology
विवरण:
SRAM 1.8/2.5V 512K x 32 16M
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GS8161E32DGT-333IV डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GS8161E32DGT-333IV थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
GSI प्रविधि
उत्पादन कोटि:
SRAM
RoHS:
Y
मेमोरी साइज:
18 Mbit
संगठन:
512 k x 32
पहुँच समय:
5 ns
अधिकतम घडी आवृत्ति:
333 MHz
इन्टरफेस प्रकार:
समानान्तर
आपूर्ति भोल्टेज - अधिकतम:
2.7 V
आपूर्ति भोल्टेज - न्यूनतम:
1.7 V
हालको आपूर्ति - अधिकतम:
260 mA, 330 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 85 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TQFP-100
प्याकेजिङ:
ट्रे
मेमोरी प्रकार:
SDR
शृङ्खला:
GS8161E32DGT
प्रकार:
DCD पाइपलाइन/फ्लो थ्रु
ब्रान्ड:
GSI प्रविधि
नमी संवेदनशील:
हो
उत्पादन प्रकार:
SRAM
कारखाना प्याक मात्रा:
18
उपश्रेणी:
मेमोरी र डाटा भण्डारण
व्यापार नाम:
NBT SRAM
Tags
GS8161E32DGT-33, GS8161E32DGT-3, GS8161E32DGT, GS8161E32DG, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
छवि भाग # विवरण
GS8161E32DGD-250V

Mfr.#: GS8161E32DGD-250V

OMO.#: OMO-GS8161E32DGD-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-250V

Mfr.#: GS8161E32DD-250V

OMO.#: OMO-GS8161E32DD-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGD-400

Mfr.#: GS8161E32DGD-400

OMO.#: OMO-GS8161E32DGD-400

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-200

Mfr.#: GS8161E32DGT-200

OMO.#: OMO-GS8161E32DGT-200

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-200V

Mfr.#: GS8161E32DGD-200V

OMO.#: OMO-GS8161E32DGD-200V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-333V

Mfr.#: GS8161E32DGT-333V

OMO.#: OMO-GS8161E32DGT-333V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-333I

Mfr.#: GS8161E32DGT-333I

OMO.#: OMO-GS8161E32DGT-333I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-333I

Mfr.#: GS8161E32DD-333I

OMO.#: OMO-GS8161E32DD-333I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-375I

Mfr.#: GS8161E32DGD-375I

OMO.#: OMO-GS8161E32DGD-375I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-150I

Mfr.#: GS8161E32DD-150I

OMO.#: OMO-GS8161E32DD-150I

SRAM 2.5 or 3.3V 512K x 32 16M
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
GS8161E32DGT-333IV को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३२.५४
US$ ३२.५४
25
US$ ३०.२१
US$ ७५५.२५
बाट सुरु गर्नुहोस्
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