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S25FL128SDPBHB213

S25FL128SDPBHB213
Mfr. #:
S25FL128SDPBHB213
निर्माता:
Cypress Semiconductor
विवरण:
NOR Flash Nor
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
S25FL128SDPBHB213 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
S25FL128SDPBHB213 थप जानकारी S25FL128SDPBHB213 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
साइप्रस सेमीकन्डक्टर
उत्पादन कोटि:
न फ्ल्यास
RoHS:
Y
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
BGA-24
शृङ्खला:
S25FL128S
मेमोरी साइज:
128 Mbit
अधिकतम घडी आवृत्ति:
66 MHz
इन्टरफेस प्रकार:
SPI
संगठन:
16 M x 8
समय प्रकार:
एसिन्क्रोनस
डाटा बस चौडाइ:
8 bit
आपूर्ति भोल्टेज - न्यूनतम:
2.7 V
आपूर्ति भोल्टेज - अधिकतम:
3.6 V
हालको आपूर्ति - अधिकतम:
100 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 105 C
योग्यता:
AEC-Q100
प्याकेजिङ:
रील
मेमोरी प्रकार:
NOR
गति:
66 MHz
वास्तुकला:
मिररबिट ग्रहण
ब्रान्ड:
साइप्रस सेमीकन्डक्टर
उत्पादन प्रकार:
न फ्ल्यास
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
मेमोरी र डाटा भण्डारण
व्यापार नाम:
मिररबिट
Tags
S25FL128SDPBHB2, S25FL128SDPBHB, S25FL128SDPB, S25FL128SDP, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***i-Key
IC FLASH 128MBIT SPI/QUAD 24BGA
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
भाग # Mfg। विवरण स्टक मूल्य
S25FL128SDPBHB213
DISTI # S25FL128SDPBHB213-ND		Cypress SemiconductorIC NOR
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$2.9730
S25FL128SDPBHB213
DISTI # 727-S25FL128SPBHB213		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 2500:$2.8500
छवि भाग # विवरण
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S25FL128SAGBHVC00

Mfr.#: S25FL128SAGBHVC00

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S25FL128SAGNFA000

Mfr.#: S25FL128SAGNFA000

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 NOR Flash No
S25FL128SAGMFA001

Mfr.#: S25FL128SAGMFA001

OMO.#: OMO-S25FL128SAGMFA001-CYPRESS-SEMICONDUCTOR

 Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TUBE PACKING), GT GRADE
S25FL128P

Mfr.#: S25FL128P

OMO.#: OMO-S25FL128P-1190

 नयाँ र मौलिक
S25FL128P0XMFI0

Mfr.#: S25FL128P0XMFI0

OMO.#: OMO-S25FL128P0XMFI0-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
S25FL128SDPBHB213 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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