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SISC06DN-T1-GE3

SISC06DN-T1-GE3
Mfr. #:
SISC06DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISC06DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISC06DN-T1-GE3 DatasheetSISC06DN-T1-GE3 Datasheet (P4-P6)SISC06DN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SISC06DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
4.5 V
Qg - गेट चार्ज:
38.5 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
46.3 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIS
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
23 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
Tags
SISC0, SISC, SIS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
भाग # Mfg। विवरण स्टक मूल्य
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.3780
  • 3000:$0.3969
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SISC06DN-T1-GE3
DISTI # 59AC7448		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.3430
  • 6000:$0.3510
  • 4000:$0.3650
  • 2000:$0.4050
  • 1000:$0.4460
  • 1:$0.4650
SISC06DN-T1-GE3
DISTI # 81AC2793		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes6050
  • 500:$0.5190
  • 250:$0.5610
  • 100:$0.6030
  • 50:$0.6640
  • 25:$0.7250
  • 10:$0.7860
  • 1:$0.9490
SISC06DN-T1-GE3
DISTI # 78-SISC06DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		5990
  • 1:$0.9400
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4050
  • 3000:$0.3780
  • 6000:$0.3600
  • 9000:$0.3460
SISC06DN-T1-GE3
DISTI # 1783694		Vishay IntertechnologiesN-CHANEL 40 V (D-S) MOSFET POWERPAK 1212, RL5950
  • 3000:£0.2800
SISC06DN-T1-GE3
DISTI # 2932957		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W6050
  • 500:£0.3760
  • 250:£0.4060
  • 100:£0.4360
  • 25:£0.5700
  • 5:£0.6370
SISC06DN-T1-GE3
DISTI # 2932957		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W
RoHS: Compliant		6050
  • 1000:$0.6150
  • 500:$0.6490
  • 250:$0.7650
  • 100:$0.9270
  • 10:$1.1900
  • 1:$1.4400
छवि भाग # विवरण
OQ1632500000G

Mfr.#: OQ1632500000G

OMO.#: OMO-OQ1632500000G

 Pluggable Terminal Blocks 381 TB SKT VERTICAL
उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
SISC06DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.९४
US$ ०.९४
10
US$ ०.७८
US$ ७.७८
100
US$ ०.६०
US$ ५९.७०
500
US$ ०.५१
US$ २५७.००
1000
US$ ०.४०
US$ ४०५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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