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SIR168DP-T1-GE3

SIR168DP-T1-GE3
Mfr. #:
SIR168DP-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR168DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
आईसी चिप्स
शृङ्खला
SIRxxxDP
प्याकेजिङ
रील
अंश-उपनामहरू
SIR168DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SO-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
34.7 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
40 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
4.4 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
SIR16, SIR1, SIR
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 25.1A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:40A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0044ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SIR168DP-T1-GE3
DISTI # SIR168DP-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$0.4389
SIR168DP-T1-GE3
DISTI # 781-SIR168DP-GE3		Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10V
RoHS: Compliant		0
    SIR168DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10VAmericas -
      छवि भाग # विवरण
      SIR168DP-T1-GE3

      Mfr.#: SIR168DP-T1-GE3

      OMO.#: OMO-SIR168DP-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
      SIR168DP

      Mfr.#: SIR168DP

      OMO.#: OMO-SIR168DP-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1000
      मात्रा प्रविष्ट गर्नुहोस्:
      SIR168DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.५५
      US$ ०.५५
      10
      US$ ०.५२
      US$ ५.२०
      100
      US$ ०.४९
      US$ ४९.२६
      500
      US$ ०.४७
      US$ २३२.६०
      1000
      US$ ०.४४
      US$ ४३७.९०
      बाट सुरु गर्नुहोस्
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