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MAT03EH

MAT03EH
Mfr. #:
MAT03EH
निर्माता:
Analog Devices Inc.
विवरण:
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MAT03EH डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MAT03EH थप जानकारी MAT03EH Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
एनालग उपकरण इंक।
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - BJT
RoHS:
N
प्याकेज / केस:
TO-78-6
ट्रान्जिस्टर ध्रुवता:
PNP
कन्फिगरेसन:
दोहोरो
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
36 V
कलेक्टर - आधार भोल्टेज VCBO:
36 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
100 mV
अधिकतम DC कलेक्टर वर्तमान:
20 mA
ब्यान्डविथ उत्पादन एफटी प्राप्त गर्नुहोस्:
190 MHz
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 125 C
शृङ्खला:
MAT03
उचाइ:
4.7 mm (Max)
लम्बाइ:
9.4 mm (Max)
प्याकेजिङ:
थोक
चौडाइ:
9.4 mm (Max)
ब्रान्ड:
एनालग यन्त्रहरू
DC कलेक्टर/बेस गेन hfe न्यूनतम:
80 at 10 uA, 36 V
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर
कारखाना प्याक मात्रा:
100
उपश्रेणी:
ट्रान्जिस्टरहरू
Tags
MAT03, MAT0, MAT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
***ical
Trans GP BJT PNP 36V 0.02A 6-Pin TO-78 Tube
***log Devices
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ohm) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter break-down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
भाग # Mfg। विवरण स्टक मूल्य
MAT03EH
DISTI # MAT03EH-ND		Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
RoHS: Not compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    MAT03EHZ
    DISTI # MAT03EHZ-ND    		Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Limited Supply - Call
      MAT03EH
      DISTI # 584-MAT03EH      		Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
      RoHS: Not compliant      		0
        MAT03EHZ
        DISTI # 584-MAT03EHZ        		Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
        RoHS: Compliant        		0
          MAT03EHAnalog Devices IncSmall Signal Bipolar Transistor, 0.02A I(C), 36V V(BR)CEO, 2-Element, PNP, Silicon, TO-78
          RoHS: Not Compliant          		1310
          • 1000:$33.2500
          • 500:$35.0000
          • 100:$36.4400
          • 25:$38.0000
          • 1:$40.9200
          MAT03EHAnalog Devices IncBipolar Junction Transistor, Pair, PNP Type, TO-781
          • 1:$30.3121
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          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          5000
          मात्रा प्रविष्ट गर्नुहोस्:
          MAT03EH को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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