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IPB320N20N3 G

IPB320N20N3 G
Mfr. #:
IPB320N20N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB320N20N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB320N20N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
34 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
28 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
29 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
136 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
OptiMOS 3 Power-Transistor
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
27 S
पतन समय:
4 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
9 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
21 ns
सामान्य टर्न-अन ढिलाइ समय:
11 ns
भाग # उपनाम:
IPB320N20N3GATMA1 IPB32N2N3GXT SP000691172
एकाइ वजन:
0.139332 oz
Tags
IPB320N20N3G, IPB320, IPB32, IPB3, IPB
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB320N20N3G
DISTI # 30577587		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
RoHS: Compliant		98
  • 8:$3.1625
IPB320N20N3G
DISTI # 30580280		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
RoHS: Compliant		17
  • 9:$2.9625
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.3789
  • 2000:$1.4328
  • 1000:$1.5082
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$1.8420
  • 100:$2.1638
  • 10:$2.6410
  • 1:$2.9400
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$1.8420
  • 100:$2.1638
  • 10:$2.6410
  • 1:$2.9400
IPB320N20N3GATMA1
DISTI # V72:2272_06382940		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB320N20N3GATMA1
    DISTI # V36:1790_06382940    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000000:$1.1950
    • 500000:$1.1970
    • 100000:$1.3070
    • 10000:$1.4800
    • 1000:$1.5080
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB320N20N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 4000:$1.2900
    • 6000:$1.2900
    • 10000:$1.2900
    • 1000:$1.3900
    • 2000:$1.3900
    IPB320N20N3GATMA1
    DISTI # SP000691172    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R (Alt: SP000691172)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 6000:€1.0900
    • 10000:€1.0900
    • 4000:€1.1900
    • 2000:€1.2900
    • 1000:€1.5900
    IPB320N20N3GATMA1
    DISTI # 47W3467    		Infineon Technologies AGMOSFET, N CHANNEL, 200V, 34A, TO263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$1.7200
    • 100:$2.0200
    • 10:$2.3200
    • 1:$2.7400
    IPB320N20N3 G
    DISTI # 726-IPB320N20N3GXT    		Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		874
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 726-IPB320N20N3GATMA    		Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		962
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 7528344    		Infineon Technologies AGMOSFET N-CHANNEL 200V 34A OPTIMOS3 TO263, EA15
    • 10:£1.5600
    • 1:£2.2200
    IPB320N20N3GATMA1
    DISTI # 2212854    		Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-32
    • 500:£1.3000
    • 250:£1.4500
    • 100:£1.5500
    • 10:£1.7800
    • 1:£2.3600
    IPB320N20N3GATMA1
    DISTI # 2212854    		Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-3
    RoHS: Compliant    		12
    • 1000:$2.1600
    • 500:$2.5600
    • 250:$2.8500
    • 100:$3.0100
    • 10:$3.4700
    • 1:$4.0800
    छवि भाग # विवरण
    FAN7171M-F085

    Mfr.#: FAN7171M-F085

    OMO.#: OMO-FAN7171M-F085

    		 Gate Drivers High Current H-Side Gate Drive IC
    MURA160T3G

    Mfr.#: MURA160T3G

    OMO.#: OMO-MURA160T3G

    		 Rectifiers 600V 1A UltraFast
    NCS1002DR2G

    Mfr.#: NCS1002DR2G

    OMO.#: OMO-NCS1002DR2G

    		 Switching Controllers ANA DUAL OP AMP/VOLT REF
    LM1117MPX-5.0/NOPB

    Mfr.#: LM1117MPX-5.0/NOPB

    OMO.#: OMO-LM1117MPX-5-0-NOPB

    		 LDO Voltage Regulators 800MA LDO LINEAR REG
    MLF2012A4R7KT000

    Mfr.#: MLF2012A4R7KT000

    OMO.#: OMO-MLF2012A4R7KT000

    		 Fixed Inductors 4.7 UH 10%
    885012106022

    Mfr.#: 885012106022

    OMO.#: OMO-885012106022

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSGP 1uF 0603 20% 25V MLCC
    MLF2012A4R7KT000

    Mfr.#: MLF2012A4R7KT000

    OMO.#: OMO-MLF2012A4R7KT000-TDK

    		 Fixed Inductors 4.7 UH 10%
    LM1117MPX-5.0/NOPB

    Mfr.#: LM1117MPX-5.0/NOPB

    OMO.#: OMO-LM1117MPX-5-0-NOPB-TEXAS-INSTRUMENTS

    		 IC REG LINEAR 5V 800MA SOT223-4
    C3225X5R1C156M250AA

    Mfr.#: C3225X5R1C156M250AA

    OMO.#: OMO-C3225X5R1C156M250AA-TDK

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 15uF 20% 16Volts
    MURA160T3G

    Mfr.#: MURA160T3G

    OMO.#: OMO-MURA160T3G-ON-SEMICONDUCTOR

    		 Rectifiers 600V 1A UltraFast
    उपलब्धता
    स्टक:
    937
    अर्डर मा:
    2920
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB320N20N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.७१
    US$ २.७१
    10
    US$ २.३०
    US$ २३.००
    100
    US$ २.००
    US$ २००.००
    250
    US$ १.८९
    US$ ४७२.५०
    500
    US$ १.७०
    US$ ८५०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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