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SIHB33N60EF-GE3

SIHB33N60EF-GE3
Mfr. #:
SIHB33N60EF-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET N-Channel 600V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB33N60EF-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHB33N60EF-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY / SILICONIX
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
एकाइ - वजन
0.068654 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
EF श्रृंखला
प्याकेज-केस
TO-263-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
278 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
48 ns
उदय-समय
43 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
33 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
600 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
98 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
161 ns
सामान्य-टर्न-अन-डिले-समय
28 ns
Qg-गेट-चार्ज
155 nC
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***ure Electronics
600V, 33A, 98MOHM, D2PAK, EF SERIES
***i-Key
MOSFET N-CH 600V 33A TO-263
***ark
N-Channel 600V
***
N-CH 600V T0-263
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
भाग # Mfg। विवरण स्टक मूल्य
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		934In Stock
  • 1000:$3.8610
  • 500:$4.4330
  • 100:$5.2910
  • 10:$6.4350
  • 1:$7.1500
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.6900
  • 2000:$3.5900
  • 4000:$3.4900
  • 6000:$3.3900
  • 10000:$3.2900
SIHB33N60EF-GE3
DISTI # 78-SIHB33N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		640
  • 1:$6.5000
  • 10:$5.8600
  • 25:$5.3400
  • 100:$4.8200
  • 250:$4.4300
  • 500:$4.3500
SIHB33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
  • 3000:$3.3280
छवि भाग # विवरण
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3

 MOSFET N-Channel 600V
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

 IGBT Transistors MOSFET N-Channel 600V
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

 नयाँ र मौलिक
SIHB33N60E

Mfr.#: SIHB33N60E

OMO.#: OMO-SIHB33N60E-1190

 N-CH 600V 99mOhm 33A TO263
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

 MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 33A TO263
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
SIHB33N60EF-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४.४१
US$ ४.४१
10
US$ ४.१९
US$ ४१.९४
100
US$ ३.९७
US$ ३९७.३३
500
US$ ३.७५
US$ १ ८७६.३०
1000
US$ ३.५३
US$ ३ ५३१.८०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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