MSC025SMA120J

MSC025SMA120J
Mfr. #:
MSC025SMA120J
निर्माता:
Microchip / Microsemi
विवरण:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MSC025SMA120J डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MSC025SMA120J थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1.2 kV
Rds अन - ड्रेन-स्रोत प्रतिरोध:
31 mOhms
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
Tags
MSC025, MSC02, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
भाग # Mfg। विवरण स्टक मूल्य
MSC025SMA120J
DISTI # V36:1790_21671870
Microsemi CorporationMSC025SMA120J0
  • 10000:$55.2100
  • 5000:$55.2200
  • 1000:$57.9500
  • 100:$64.8000
  • 10:$66.0800
MSC025SMA120J
DISTI # 691-MSC025SMA120J-ND
Microsemi CorporationGEN2 SIC MOSFET 1200V 25MOHM SOT
Min Qty: 1
Container: Tube
20In Stock
  • 100:$56.5807
  • 25:$61.1236
  • 10:$62.7760
  • 1:$66.0800
MSC025SMA120J
DISTI # MSC025SMA120J
Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 77A SOT-227 - Rail/Tube (Alt: MSC025SMA120J)
RoHS: Compliant
Min Qty: 10
Container: Tube
Americas - 0
  • 100:$51.2900
  • 50:$52.0900
  • 30:$53.7900
  • 20:$55.5900
  • 10:$57.4900
MSC025SMA120J
DISTI # 494-MSC025SMA120J
Microchip Technology IncMOSFET UNRLS, FG, SIC MOSFET, SOT-227
RoHS: Compliant
21
  • 1:$86.0800
  • 2:$83.4900
  • 5:$82.4700
  • 10:$80.8700
  • 25:$78.2500
  • 50:$76.5200
  • 100:$72.4600
MSC025SMA120J
DISTI # MSC025SMA120J
Microsemi CorporationSILICON CARBIDE MOSFETS
RoHS: Compliant
250
  • 1:$63.0500
  • 10:$54.1600
  • 50:$52.7900
  • 100:$52.1300
छवि भाग # विवरण
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

MOSFET SIC MOS 80MW 1200V
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120-STMICROELECTRONICS

MOSFET N-CH 1.2KV TO247-3
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1-ON-SEMICONDUCTOR

SIC MOS TO247 80MW 1200V
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
MSC025SMA120J को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ८६.०८
US$ ८६.०८
2
US$ ८३.४९
US$ १६६.९८
5
US$ ८२.४७
US$ ४१२.३५
10
US$ ८०.८७
US$ ८०८.७०
25
US$ ७८.२५
US$ १ ९५६.२५
50
US$ ७६.५२
US$ ३ ८२६.००
100
US$ ७२.४६
US$ ७ २४६.००
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • dsPIC33CH Curiosity Development Board
    Microchip Technology's DM330028-2 Curiosity development board is a cost-effective, fully integrated 16-bit development platform.
  • Compare MSC025SMA120J
    MSC025SMA120B vs MSC025SMA120J vs MSC025SMA120S
  • MPLAB® ICD 4 Programmer/Debugger
    Microchip Technology's MPLAB ICD 4 programmer/debugger includes all the features of the popular MPLAB ICD 3 debugger while adding increased speed through a faster processor and increased RAM.
  • AVR® XMEGA® LCD Peripheral
    Microchip's XMEGAs, with integrated ultra-low-power LCD controllers, need only 3 µA to run the LCD display and include built-in contrast control.
  • ZigBee® PRO Platform
    Microchip Technology has released the industry’s first ZigBee alliance certified ZigBee platform with ZigBee PRO and green power features.
  • ATA6560/61 Controller Area Network (CAN) Flexible
    Microchip's ATA6560 and ATA6561 CAN FD transceivers feature three operating modes, dedicated fail-safe features, and are suitable for high-speed CAN networks.
Top