SI7922DN-T1-GE3

Mfr. #:: SI7922DN-T1-GE3
निर्माता:: Vishay
विवरण:: IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI7922DN-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: VISHAY

उत्पादन कोटि: आईसी चिप्स

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI7922DN-GE3

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: PowerPAKR 1212-8 Dual

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: PowerPAKR 1212-8 Dual

कन्फिगरेसन: दोहोरो

FET-प्रकार: 2 N-Channel (Dual)

पावर-अधिकतम: 1.3W

ट्रान्जिस्टर-प्रकार: 2 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 100V

इनपुट-Capacitance-Ciss-Vds: -

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 1.8A

Rds-on-max-Id-Vgs: 195 mOhm @ 2.5A, 10V

Vgs-th-max-Id: 3.5V @ 250μA

गेट-चार्ज-Qg-Vgs: 8nC @ 10V

Pd-शक्ति-डिसिपेशन: 1.3 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 11 ns

उदय-समय: 11 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 1.8 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 100 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 195 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 8 ns

सामान्य-टर्न-अन-डिले-समय: 7 ns

च्यानल-मोड: वृद्धि

Tags: SI7922DN-T, SI7922D, SI7922, SI792, SI79, SI7

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7922DN-T1-GE3 विवरण

***ure Electronics: Dual N-Channel 100 V 0.195 Ohm Surface Mount Power MosFet - PowerPAK-1212-8

***et Europe: Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET 2N-CH 100V 1.8A 1212-8

***ronik: DUAL 100V 3A 195mOhm PPAK

***: DUAL N-CHANNEL 100-V (D-S)

***ark: Transistor; Continuous Drain Current, Id:2500mA; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):0.230ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.5V; Power Dissipation, Pd:1.3W ;RoHS Compliant: Yes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI7922DN-T1-GE3 DISTI # SI7922DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8465
SI7922DN-T1-GE3 DISTI # SI7922DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI7922DN-T1-GE3 DISTI # SI7922DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI7922DN-T1-GE3 DISTI # SI7922DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7922DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.8289 6000:$0.8049 12000:$0.7719 18000:$0.7499 30000:$0.7299
SI7922DN-T1-GE3 DISTI # 16P3880	Vishay Intertechnologies	DUAL N CH MOSFET, 100V, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes	0	1:$0.8440 3000:$0.8380 6000:$0.7980 12000:$0.7070
SI7922DN-T1-GE3 DISTI # 781-SI7922DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	0	1:$1.7800 10:$1.4800 100:$1.1400 500:$0.9980 1000:$0.9510 3000:$0.9500
SI7922DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8	Americas -

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI7922DN-T1-E3 OMO.#: OMO-SI7922DN-T1-E3	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7922DN-T1-GE3 OMO.#: OMO-SI7922DN-T1-GE3	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7922DN-T1-GE3 OMO.#: OMO-SI7922DN-T1-GE3-VISHAY	IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V
	Mfr.#: SI7922DN-T1-E3 OMO.#: OMO-SI7922DN-T1-E3-VISHAY	IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
	Mfr.#: SI7922DN-T1-E3-CUT TAPE OMO.#: OMO-SI7922DN-T1-E3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SI7922DN OMO.#: OMO-SI7922DN-1190	MOSFET, DUAL, NN, POWERPAK
	Mfr.#: SI7922DN-T1 OMO.#: OMO-SI7922DN-T1-1190	MOSFET Transistor, Matched Pair, N-Channel, LLCC

उपलब्धता

स्टक:: Available
अर्डर मा:: 1500
मात्रा प्रविष्ट गर्नुहोस्:

SI7922DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.०२~~; ~~US$ १.०२~~

10: ~~US$ ०.९७~~; ~~US$ ९.६९~~

100: ~~US$ ०.९२~~; ~~US$ ९१.८४~~

500: ~~US$ ०.८७~~; ~~US$ ४३३.७०~~

1000: ~~US$ ०.८२~~; ~~US$ ८१६.४०~~

बाट सुरु गर्नुहोस्

SI7922DN-T 4
SI7922D 5
SI7922 6
SI792 14
SI79 142
SI7 1547

SI7922DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes