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TK100E08N1,S1X

TK100E08N1,S1X
Mfr. #:
TK100E08N1,S1X
निर्माता:
Toshiba
विवरण:
MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TK100E08N1,S1X डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK100E08N1,S1X DatasheetTK100E08N1,S1X Datasheet (P4-P6)TK100E08N1,S1X Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
TK100E08N1,S1X थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
214 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.2 mOhms
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
130 nC
कन्फिगरेसन:
एकल
व्यापार नाम:
DTMOSIV
उचाइ:
15.1 mm
लम्बाइ:
10.16 mm
शृङ्खला:
TK100E08N1
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.45 mm
ब्रान्ड:
तोशिबा
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.211644 oz
Tags
TK100E08, TK100E0, TK100E, TK100, TK10, TK1
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 80V 100A TO220
***
POWER MOSFET TRANSISTOR
***et
LV-MOS_80V_3.2MOHM MAX(VGS=10V)_TO-220
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
भाग # Mfg। विवरण स्टक मूल्य
TK100E08N1,S1X(S
DISTI # C1S751201056876		Toshiba America Electronic ComponentsMOSFETs
RoHS: Compliant		50
  • 50:$8.9600
  • 10:$9.3800
  • 5:$9.8500
TK100E08N1,S1X
DISTI # TK100E08N1S1X-ND		Toshiba America Electronic ComponentsMOSFET N-CH 80V 100A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		118In Stock
  • 1000:$3.0800
  • 500:$3.6520
  • 100:$4.5100
  • 50:$4.9500
  • 1:$6.1600
TK100E08N1S1X
DISTI # TK100E08N1,S1X		Toshiba America Electronic ComponentsTrans MOSFET N 80V 214A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK100E08N1,S1X)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 0
  • 50:$1.9900
  • 100:$1.8900
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.5900
TK100E08N1S1X(S
DISTI # TK100E08N1,S1X(S		Toshiba America Electronic ComponentsTrans MOSFET N-CH 80V 214A 3-Pin TO-220 Tube (Alt: TK100E08N1,S1X(S)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
    TK100E08N1,S1X
    DISTI # 757-TK100E08N1S1X    		Toshiba America Electronic ComponentsMOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
    RoHS: Compliant    		0
    • 1:$3.6400
    • 10:$2.9300
    • 100:$2.6700
    • 250:$2.4100
    • 500:$2.1600
    • 1000:$1.8200
    • 2500:$1.7300
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    मात्रा प्रविष्ट गर्नुहोस्:
    TK100E08N1,S1X को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.६४
    US$ ३.६४
    10
    US$ २.९३
    US$ २९.३०
    100
    US$ २.६७
    US$ २६७.००
    250
    US$ २.४१
    US$ ६०२.५०
    500
    US$ २.१६
    US$ १ ०८०.००
    1000
    US$ १.८२
    US$ १ ८२०.००
    2500
    US$ १.७३
    US$ ४ ३२५.००
    5000
    US$ १.६७
    US$ ८ ३५०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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