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DMN1019USN-13

DMN1019USN-13
Mfr. #:
DMN1019USN-13
निर्माता:
Diodes Incorporated
विवरण:
MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
DMN1019USN-13 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
डायोड सम्मिलित
उत्पादन कोटि
FETs - एकल
शृङ्खला
DMN10
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
एकाइ - वजन
0.000282 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TO-236-3, SC-59, SOT-23-3
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
SC-59
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
680mW
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
12V
इनपुट-Capacitance-Ciss-Vds
2426pF @ 10V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
9.3A (Ta)
Rds-on-max-Id-Vgs
10 mOhm @ 9.7A, 4.5V
Vgs-th-max-Id
800mV @ 250μA
गेट-चार्ज-Qg-Vgs
50.6nC @ 8V
Pd-शक्ति-डिसिपेशन
1.2 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
16.8 ns
उदय-समय
57.6 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
9.3 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
12 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
0.53 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
41 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
22.2 ns
सामान्य-टर्न-अन-डिले-समय
7.6 ns
Qg-गेट-चार्ज
50.6 nC
च्यानल-मोड
वृद्धि
Tags
DMN1019US, DMN1019, DMN101, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
***et
Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R
***i-Key
MOSFET N-CH 12V 9.3A SC59
***ure Electronics
N-CH 12V 9.3A SC59
***ark
Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:n Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530Mv; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; Power Dissipation Pd:680mW; Transistor Case Style:SC-59; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 12V, 9.3A, SC-59; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:12V; Rezystancja przewodzenia Rds(on):0.007ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:530mV; Straty mocy Pd:680mW; Rodzaj obudowy tranzystora:SC-59; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2019)
भाग # Mfg। विवरण स्टक मूल्य
DMN1019USN-13
DISTI # DMN1019USN-13DITR-ND		Diodes IncorporatedMOSFET N-CH 12V 9.3A SC59
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		On Order
  • 10000:$0.1168
DMN1019USN-13
DISTI # DMN1019USN-13DICT-ND		Diodes IncorporatedMOSFET N-CH 12V 9.3A SC59
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1493
  • 500:$0.1991
  • 100:$0.2903
  • 10:$0.4230
  • 1:$0.5400
DMN1019USN-13
DISTI # DMN1019USN-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 12V 9.3A SC59
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1493
  • 500:$0.1991
  • 100:$0.2903
  • 10:$0.4230
  • 1:$0.5400
DMN1019USN-13
DISTI # DMN1019USN-13		Diodes IncorporatedTrans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN1019USN-13)
RoHS: Not Compliant
Min Qty: 10000
Container: Reel		Americas - 0
  • 10000:$0.0919
  • 20000:$0.0869
  • 40000:$0.0829
  • 60000:$0.0789
  • 100000:$0.0769
DMN1019USN-7
DISTI # 621-DMN1019USN-7		Diodes IncorporatedMOSFET 12V N-Ch Enh FET 2426pF 27.3nC
RoHS: Compliant		43527
  • 1:$0.4300
  • 10:$0.3250
  • 100:$0.1760
  • 1000:$0.1320
  • 3000:$0.1140
DMN1019USN-13
DISTI # 621-DMN1019USN-13		Diodes IncorporatedMOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
RoHS: Compliant		0
  • 10000:$0.1070
छवि भाग # विवरण
DMN1019UFDE-7

Mfr.#: DMN1019UFDE-7

OMO.#: OMO-DMN1019UFDE-7

 MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
DMN1017UCP3-7

Mfr.#: DMN1017UCP3-7

OMO.#: OMO-DMN1017UCP3-7

 MOSFET MOSFETBVDSS: 8V-24V
DMN1019UVT-7

Mfr.#: DMN1019UVT-7

OMO.#: OMO-DMN1019UVT-7

 MOSFET 12V Enh Mode FET
DMN1019UVT-13

Mfr.#: DMN1019UVT-13

OMO.#: OMO-DMN1019UVT-13

 MOSFET 12V Enh Mode FET
DMN1016UCB6-7

Mfr.#: DMN1016UCB6-7

OMO.#: OMO-DMN1016UCB6-7

 MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
DMN1019USN

Mfr.#: DMN1019USN

OMO.#: OMO-DMN1019USN-1190

 नयाँ र मौलिक
DMN1019USN-7-F

Mfr.#: DMN1019USN-7-F

OMO.#: OMO-DMN1019USN-7-F-1190

 नयाँ र मौलिक
DMN1016UCB6-7

Mfr.#: DMN1016UCB6-7

OMO.#: OMO-DMN1016UCB6-7-DIODES

 MOSFET N-CH 12V 5.5A U-WLB1510-6
DMN1019USN-7

Mfr.#: DMN1019USN-7

OMO.#: OMO-DMN1019USN-7-DIODES

 IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
DMN1019USN-13

Mfr.#: DMN1019USN-13

OMO.#: OMO-DMN1019USN-13-DIODES

 MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
DMN1019USN-13 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.१२
US$ ०.१२
10
US$ ०.११
US$ १.१०
100
US$ ०.१०
US$ १०.३८
500
US$ ०.१०
US$ ४९.००
1000
US$ ०.०९
US$ ९२.३०
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