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SIZ980DT-T1-GE3

SIZ980DT-T1-GE3
Mfr. #:
SIZ980DT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZ980DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ980DT-T1-GE3 DatasheetSIZ980DT-T1-GE3 Datasheet (P4-P6)SIZ980DT-T1-GE3 Datasheet (P7-P9)SIZ980DT-T1-GE3 Datasheet (P10-P12)SIZ980DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
SIZ980DT-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAIR-6x5-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
20 A, 60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.7 mOhms, 1.1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V, 1.1 V
Vgs - गेट-स्रोत भोल्टेज:
- 16 V, 20 V
Qg - गेट चार्ज:
18 nC, 77 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
20 W, 66 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
0.75 mm
लम्बाइ:
6 mm
शृङ्खला:
SIZ
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
5 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
80 S, 155 S
पतन समय:
10 ns, 10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
65 ns, 75 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
10 ns, 30 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns, 35 ns
Tags
SIZ9, SiZ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR T/R
***et
DUAL N-CHANNEL 30-V (D-S) MOSFET
***ark
Mosfet, Dual N-Ch, 30V, 60A, Powerpair; Transistor Polarity:dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Rohs Compliant: Yes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
भाग # Mfg। विवरण स्टक मूल्य
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.7238
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR T/R (Alt: SIZ980DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€1.3109
  • 6000:€0.9399
  • 12000:€0.7619
  • 18000:€0.6739
  • 30000:€0.6449
SIZ980DT-T1-GE3
DISTI # SIZ980DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ980DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6839
  • 6000:$0.6629
  • 12000:$0.6359
  • 18000:$0.6189
  • 30000:$0.6019
SIZ980DT-T1-GE3
DISTI # 78-SIZ980DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
RoHS: Compliant		5963
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.8460
  • 3000:$0.7840
SIZ980DT-T1-GE3
DISTI # 2802798		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
RoHS: Compliant		0
  • 5:£1.0900
  • 25:£0.9590
  • 100:£0.8280
  • 250:£0.7740
  • 500:£0.7190
SIZ980DT-T1-GE3
DISTI # 2802798		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
RoHS: Compliant		0
  • 5:$2.7800
  • 25:$2.3000
  • 100:$1.8100
  • 250:$1.4900
  • 500:$1.2600
  • 1000:$1.1900
  • 5000:$1.1500
SIZ980DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
RoHS: Compliant		Americas -
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1988
    मात्रा प्रविष्ट गर्नुहोस्:
    SIZ980DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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    10
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