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STW15NM60ND

STW15NM60ND
Mfr. #:
STW15NM60ND
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-channel 600 V FDMesh
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STW15NM60ND डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STW15NM60ND थप जानकारी STW15NM60ND Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
14 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
299 mOhms
Vgs - गेट-स्रोत भोल्टेज:
25 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
FDmesh
प्याकेजिङ:
ट्यूब
उचाइ:
20.15 mm
लम्बाइ:
15.75 mm
शृङ्खला:
STW15NM60ND
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
28 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
600
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
47 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
एकाइ वजन:
1.340411 oz
Tags
STW15NM60N, STW15NM, STW15N, STW15, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-247 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 14A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
भाग # Mfg। विवरण स्टक मूल्य
STW15NM60ND
DISTI # 497-8452-5-ND		STMicroelectronicsMOSFET N-CH 600V 14A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		391In Stock
  • 120:$5.1078
  • 30:$5.6600
  • 1:$6.9000
STW15NM60ND
DISTI # 511-STW15NM60ND		STMicroelectronicsMOSFET N-channel 600 V FDMesh
RoHS: Compliant		0
    STW15NM60NDST Microwave CorporationPower Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    RoHS: Compliant    		Europe - 540
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      		 नयाँ र मौलिक
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      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4500
      मात्रा प्रविष्ट गर्नुहोस्:
      STW15NM60ND को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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