71V416L15BEI

71V416L15BEI
Mfr. #:
71V416L15BEI
निर्माता:
IDT
विवरण:
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
71V416L15BEI डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
IDT (एकीकृत उपकरण प्रविधि)
उत्पादन कोटि:
SRAM
RoHS:
N
मेमोरी साइज:
4 Mbit
संगठन:
256 k x 16
पहुँच समय:
15 ns
इन्टरफेस प्रकार:
समानान्तर
आपूर्ति भोल्टेज - अधिकतम:
3.6 V
आपूर्ति भोल्टेज - न्यूनतम:
3 V
हालको आपूर्ति - अधिकतम:
160 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 85 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
CABGA-48
प्याकेजिङ:
ट्रे
उचाइ:
1.2 mm
लम्बाइ:
9 mm
मेमोरी प्रकार:
SDR
शृङ्खला:
71V416L15
प्रकार:
एसिन्क्रोनस
चौडाइ:
9 mm
ब्रान्ड:
IDT
नमी संवेदनशील:
हो
उत्पादन प्रकार:
SRAM
कारखाना प्याक मात्रा:
250
उपश्रेणी:
मेमोरी र डाटा भण्डारण
भाग # उपनाम:
71V416 IDT71V416L15BEI
Tags
71V416L15B, 71V416L15, 71V416L, 71V41, 71V4, 71V
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***egrated Device Technology
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
***i-Key
IC SRAM 4MBIT PARALLEL 48CABGA
*** Electronic Components
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
भाग # Mfg। विवरण स्टक मूल्य
71V416L15BEI
DISTI # 71V416L15BEI-ND
Integrated Device Technology IncIC SRAM 4M PARALLEL 48CABGA
RoHS: Not compliant
Min Qty: 250
Container: Tray
Temporarily Out of Stock
  • 250:$5.3030
71V416L15BEI8
DISTI # 71V416L15BEI8-ND
Integrated Device Technology IncIC SRAM 4M PARALLEL 48CABGA
RoHS: Not compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$4.6069
71V416L15BEI
DISTI # 71V416L15BEI
Integrated Device Technology Inc3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - Rail/Tube (Alt: 71V416L15BEI)
RoHS: Not Compliant
Min Qty: 250
Container: Tube
Americas - 0
  • 250:$4.9900
  • 500:$4.6900
  • 1000:$4.4900
  • 1500:$4.1900
  • 2500:$4.0900
71V416L15BEI8
DISTI # 71V416L15BEI8
Integrated Device Technology Inc3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - Tape and Reel (Alt: 71V416L15BEI8)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$4.9900
  • 4000:$4.6900
  • 8000:$4.4900
  • 12000:$4.1900
  • 20000:$4.0900
71V416L15BEIIntegrated Device Technology Inc 
RoHS: Not Compliant
508
  • 1000:$4.7800
  • 500:$5.0300
  • 100:$5.2400
  • 25:$5.4600
  • 1:$5.8800
71V416L15BEI
DISTI # 972-71V416L15BEI
Integrated Device Technology IncSRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
RoHS: Not compliant
0
  • 250:$5.5600
  • 500:$5.2100
  • 1000:$4.8800
71V416L15BEI8
DISTI # 972-71V416L15BEI8
Integrated Device Technology IncSRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
RoHS: Not compliant
0
  • 2000:$4.8800
छवि भाग # विवरण
71V416L10BEG

Mfr.#: 71V416L10BEG

OMO.#: OMO-71V416L10BEG

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416S12PHGI

Mfr.#: 71V416S12PHGI

OMO.#: OMO-71V416S12PHGI

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416L12BEG

Mfr.#: 71V416L12BEG

OMO.#: OMO-71V416L12BEG

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416L15BE8

Mfr.#: 71V416L15BE8

OMO.#: OMO-71V416L15BE8

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416L10BE8

Mfr.#: 71V416L10BE8

OMO.#: OMO-71V416L10BE8

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416S12PHI8

Mfr.#: 71V416S12PHI8

OMO.#: OMO-71V416S12PHI8-1190

नयाँ र मौलिक
71V416L12BEGI8

Mfr.#: 71V416L12BEGI8

OMO.#: OMO-71V416L12BEGI8-INTEGRATED-DEVICE-TECH

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416S10YG8

Mfr.#: 71V416S10YG8

OMO.#: OMO-71V416S10YG8-INTEGRATED-DEVICE-TECH

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
71V416L10PHGI

Mfr.#: 71V416L10PHGI

OMO.#: OMO-71V416L10PHGI-INTEGRATED-DEVICE-TECH

IC SRAM 4M PARALLEL 44TSOP II
71V416S10PHG8 TSOP44

Mfr.#: 71V416S10PHG8 TSOP44

OMO.#: OMO-71V416S10PHG8-TSOP44-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
71V416L15BEI को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.९९
US$ ६.९९
10
US$ ६.३९
US$ ६३.९०
25
US$ ६.२६
US$ १५६.५०
50
US$ ६.२२
US$ ३११.००
100
US$ ५.५८
US$ ५५८.००
250
US$ ५.५६
US$ १ ३९०.००
500
US$ ५.२१
US$ २ ६०५.००
1000
US$ ४.८८
US$ ४ ८८०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • CSD87501L Power MOSFET
    Texas Instruments CSD87501L 30V, 6.6 mΩ, 3.37×1.47 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint.
  • Compare 71V416L15BEI
    71V416L15BE vs 71V416L15BE8 vs 71V416L15BEG
  • TMUX1072 2-Channel Analog Multiplexers (Muxes)
    TI's TMUX1072 analog muxes expand the limited number of I/Os by switching between multiple signal paths in order to interface them to a single processor or MCU.
  • bq2409x Li-Ion Battery Chargers
    Texas Instruments' bq2409x is a highly-integrated family of single cell Li-Ion and Li-Pol chargers and can be used to charge a battery, power a system, or both.
  • TIOL111 IO-Link Device Transceivers
    Texas Instruments' TIOL111 IO-Link device transceivers are ideal for IO-Link sensors and actuators, factory automation, and process automation applications.
  • MIKROE-957 Analog System Lab Kit (ASLK) PRO
    The ASLK PRO has been created by MikroElektronika for Texas Instruments and is designed for undergraduate engineering students to perform analog lab experiments.
Top