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HGT1S7N60C3DS

HGT1S7N60C3DS
Mfr. #:
HGT1S7N60C3DS
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors 7A 600V TF=275NS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
HGT1S7N60C3DS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
E
प्रविधि:
सि
प्याकेज / केस:
TO-263AB-3
माउन्टिङ शैली:
SMD/SMT
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.6 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
14 A
Pd - शक्ति अपव्यय:
60 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
14 A
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
चौडाइ:
9.65 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
14 A
गेट-एमिटर चुहावट वर्तमान:
+/- 250 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
50
उपश्रेणी:
IGBTs
एकाइ वजन:
0.056438 oz
Tags
HGT1S7N60C, HGT1S7, HGT1S, HGT1, HGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
HGT1S7N60C3DS
DISTI # 512-HGT1S7N60C3DS		ON SemiconductorIGBT Transistors 7A 600V TF=275NS
RoHS: Compliant		0
    HGT1S7N60C3DS9A
    DISTI # 512-HGT1S7N60C3DS9A    		ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
    RoHS: Compliant    		0
      HGT1S7N60C3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		8600
      • 1000:$1.1300
      • 500:$1.1900
      • 100:$1.2400
      • 25:$1.2900
      • 1:$1.3900
      HGT1S7N60C3DS9AHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		25600
      • 1000:$2.0700
      • 500:$2.1800
      • 100:$2.2600
      • 25:$2.3600
      • 1:$2.5400
      छवि भाग # विवरण
      HGT1S7N60C3DS9A

      Mfr.#: HGT1S7N60C3DS9A

      OMO.#: OMO-HGT1S7N60C3DS9A

      		 IGBT Transistors 14a 600V N-Ch IGBT UFS Series
      HGT1S7N60A4

      Mfr.#: HGT1S7N60A4

      OMO.#: OMO-HGT1S7N60A4-1190

      		 नयाँ र मौलिक
      HGT1S7N60A4DS,G7N60A4D

      Mfr.#: HGT1S7N60A4DS,G7N60A4D

      OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

      		 नयाँ र मौलिक
      HGT1S7N60A4DS9A

      Mfr.#: HGT1S7N60A4DS9A

      OMO.#: OMO-HGT1S7N60A4DS9A-1190

      		 Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S7N60A4S9A

      Mfr.#: HGT1S7N60A4S9A

      OMO.#: OMO-HGT1S7N60A4S9A-1190

      		 IGBT Transistors 600V N-Channel IGBT SMPS Series
      HGT1S7N60B3D

      Mfr.#: HGT1S7N60B3D

      OMO.#: OMO-HGT1S7N60B3D-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3DS

      Mfr.#: HGT1S7N60B3DS

      OMO.#: OMO-HGT1S7N60B3DS-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S7N60B3DS9A

      Mfr.#: HGT1S7N60B3DS9A

      OMO.#: OMO-HGT1S7N60B3DS9A-1190

      		 IGBT Transistors 14A 600V UFS N-Ch
      HGT1S7N60B3S

      Mfr.#: HGT1S7N60B3S

      OMO.#: OMO-HGT1S7N60B3S-1190

      		 नयाँ र मौलिक
      HGT1S7N60C3DS

      Mfr.#: HGT1S7N60C3DS

      OMO.#: OMO-HGT1S7N60C3DS-ON-SEMICONDUCTOR

      		 IGBT 600V 14A 60W TO263AB
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      HGT1S7N60C3DS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
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