NGTB35N65FL2WG

NGTB35N65FL2WG
Mfr. #:
NGTB35N65FL2WG
निर्माता:
ON Semiconductor
विवरण:
IGBT Transistors 650V/35A FAST IGBT FSII T
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NGTB35N65FL2WG डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
NGTB35N65FL2WG थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
ON अर्धचालक
उत्पादन कोटि
IGBTs - एकल
शृङ्खला
-
प्याकेजिङ
ट्यूब
एकाइ - वजन
1.340411 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-247-3
इनपुट-प्रकार
मानक
माउन्टिङ-प्रकार
प्वाल मार्फत
आपूर्तिकर्ता-उपकरण-प्याकेज
TO-247
कन्फिगरेसन
एकल
पावर-अधिकतम
300W
उल्टो-रिकभरी-समय-trr
68ns
वर्तमान-कलेक्टर-आईसी-मैक्स
70A
भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम
650V
IGBT-प्रकार
ट्रेन्च फिल्ड स्टप
वर्तमान-कलेक्टर-स्पंद-आईसीएम
120A
Vce-on-Max-Vge-Ic
2V @ 15V, 35A
स्विचिङ-ऊर्जा
840μJ (on), 280μJ (off)
गेट चार्ज
125nC
Td-on-off-25°C
72ns/132ns
परीक्षण अवस्था
400V, 35A, 10 Ohm, 15V
Pd-शक्ति-डिसिपेशन
300 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
कलेक्टर-एमिटर-भोल्टेज-VCEO-अधिकतम
650 V
कलेक्टर-एमिटर-स्याचुरेसन-भोल्टेज
2.2 V
निरन्तर-कलेक्टर-वर्तमान-मा-25-C
70 A
गेट-एमिटर-लीकेज-करेन्ट
200 nA
अधिकतम-गेट-एमिटर-भोल्टेज
20 V
निरन्तर-कलेक्टर-वर्तमान-आईसी-अधिकतम
70 A
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
भाग # Mfg। विवरण स्टक मूल्य
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WGOS-ND
ON SemiconductorIGBT 650V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
107In Stock
  • 1020:$1.6464
  • 510:$1.9522
  • 120:$2.2932
  • 30:$2.6460
  • 1:$3.1200
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG)
Min Qty: 202
Container: Bulk
Americas - 0
  • 202:$1.5900
  • 204:$1.5900
  • 406:$1.4900
  • 1010:$1.4900
  • 2020:$1.4900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$1.3900
  • 10:$1.3900
  • 25:$1.3900
  • 50:$1.3900
  • 100:$1.3900
  • 500:$1.3900
  • 1000:$1.2900
NGTB35N65FL2WG.
DISTI # 61AC1092
ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes21
  • 1000:$1.2900
  • 1:$1.3900
NGTB35N65FL2WG
DISTI # 70547360
ON SemiconductorNGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247
RoHS: Compliant
0
  • 2:$2.9600
  • 20:$2.8200
  • 50:$2.6800
  • 100:$2.5500
  • 200:$2.4200
NGTB35N65FL2WG
DISTI # 863-NGTB35N65FL2WG
ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
RoHS: Compliant
901
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.5700
  • 2500:$1.4900
  • 5000:$1.4400
NGTB35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
210
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
NGTB35N65FL2WG
DISTI # 8427898P
ON SemiconductorIGBT FIELD STOP II 650V 35A DIODE TO247, TU284
  • 40:£1.7950
  • 20:£1.8900
NGTB35N65FL2WGON Semiconductor 2361
    छवि भाग # विवरण
    NGTB35N65FL2WG

    Mfr.#: NGTB35N65FL2WG

    OMO.#: OMO-NGTB35N65FL2WG

    IGBT Transistors 650V/35A FAST IGBT FSII T
    NGTB35N60FL2WG

    Mfr.#: NGTB35N60FL2WG

    OMO.#: OMO-NGTB35N60FL2WG

    IGBT Transistors 600V/35A FAST IGBT FSII T
    NGTB35N65FL2WG

    Mfr.#: NGTB35N65FL2WG

    OMO.#: OMO-NGTB35N65FL2WG-ON-SEMICONDUCTOR

    IGBT Transistors 650V/35A FAST IGBT FSII T
    NGTB35N60FL2WG

    Mfr.#: NGTB35N60FL2WG

    OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR

    IGBT Transistors 600V/35A FAST IGBT FSII T
    NGTB35N60FL2W

    Mfr.#: NGTB35N60FL2W

    OMO.#: OMO-NGTB35N60FL2W-1190

    नयाँ र मौलिक
    NGTB35N65FL2

    Mfr.#: NGTB35N65FL2

    OMO.#: OMO-NGTB35N65FL2-1190

    नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4000
    मात्रा प्रविष्ट गर्नुहोस्:
    NGTB35N65FL2WG को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.१३
    US$ २.१३
    10
    US$ २.०२
    US$ २०.२४
    100
    US$ १.९२
    US$ १९१.७०
    500
    US$ १.८१
    US$ ९०५.२५
    1000
    US$ १.७०
    US$ १ ७०४.००
    बाट सुरु गर्नुहोस्
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