RN1965(TE85L,F)

RN1965(TE85L,F)
Mfr. #:
RN1965(TE85L,F)
निर्माता:
Toshiba
विवरण:
Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RN1965(TE85L,F) डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RN1965(TE85L,F) DatasheetRN1965(TE85L,F) Datasheet (P4-P6)RN1965(TE85L,F) Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती
कन्फिगरेसन:
दोहोरो
ट्रान्जिस्टर ध्रुवता:
NPN
विशिष्ट इनपुट प्रतिरोधक:
2.2 kOhms
विशिष्ट प्रतिरोधी अनुपात:
0.0468
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
US-6
DC कलेक्टर/बेस गेन hfe न्यूनतम:
80
अधिकतम परिचालन आवृत्ति:
250 MHz
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
50 V
निरन्तर कलेक्टर वर्तमान:
100 mA
पीक डीसी कलेक्टर वर्तमान:
100 mA
Pd - शक्ति अपव्यय:
200 mW
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
रील
उत्सर्जक - आधार भोल्टेज VEBO:
5 V
ब्रान्ड:
तोशिबा
च्यानल मोड:
वृद्धि
अधिकतम DC कलेक्टर वर्तमान:
100 mA
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
ट्रान्जिस्टरहरू
Tags
RN1965(T, RN1965, RN196, RN19, RN1
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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CoC and 2-years warranty / RFQ for pricing
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***nell
TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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TRANS, PNP, -50V, -0.1A, 150DEG C, 0.2W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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छवि भाग # विवरण
RN1965(TE85L,F)

Mfr.#: RN1965(TE85L,F)

OMO.#: OMO-RN1965-TE85L-F-

Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
RN1965(TE85LF)CT-ND

Mfr.#: RN1965(TE85LF)CT-ND

OMO.#: OMO-RN1965-TE85LF-CT-ND-1190

नयाँ र मौलिक
RN1965(TE85LF)DKR-ND

Mfr.#: RN1965(TE85LF)DKR-ND

OMO.#: OMO-RN1965-TE85LF-DKR-ND-1190

नयाँ र मौलिक
RN1965(TE85LF)TR-ND

Mfr.#: RN1965(TE85LF)TR-ND

OMO.#: OMO-RN1965-TE85LF-TR-ND-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
RN1965(TE85L,F) को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.४१
US$ ०.४१
10
US$ ०.२३
US$ २.३३
100
US$ ०.१२
US$ १२.५०
500
US$ ०.१०
US$ ५०.००
1000
US$ ०.०८
US$ ७६.००
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