GS8161Z18DGD-250V

GS8161Z18DGD-250V
Mfr. #:
GS8161Z18DGD-250V
निर्माता:
GSI Technology
विवरण:
SRAM 1.8/2.5V 1M x 18 18M
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GS8161Z18DGD-250V डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GS8161Z18DGD-250V थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
GSI प्रविधि
उत्पादन कोटि:
SRAM
RoHS:
Y
मेमोरी साइज:
18 Mbit
संगठन:
1 M x 18
पहुँच समय:
5.5 ns
अधिकतम घडी आवृत्ति:
250 MHz
इन्टरफेस प्रकार:
समानान्तर
आपूर्ति भोल्टेज - अधिकतम:
2.7 V
आपूर्ति भोल्टेज - न्यूनतम:
1.7 V
हालको आपूर्ति - अधिकतम:
205 mA, 225 mA
न्यूनतम परिचालन तापमान:
0 C
अधिकतम परिचालन तापमान:
+ 70 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
BGA-165
प्याकेजिङ:
ट्रे
मेमोरी प्रकार:
SDR
शृङ्खला:
GS8161Z18DGD
प्रकार:
NBT
ब्रान्ड:
GSI प्रविधि
नमी संवेदनशील:
हो
उत्पादन प्रकार:
SRAM
कारखाना प्याक मात्रा:
18
उपश्रेणी:
मेमोरी र डाटा भण्डारण
व्यापार नाम:
NBT SRAM
Tags
GS8161Z18DGD-25, GS8161Z18DGD-2, GS8161Z18DGD, GS8161Z18DG, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5.5ns/3ns 165-Pin FBGA
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
छवि भाग # विवरण
GS8161Z18DGT-200

Mfr.#: GS8161Z18DGT-200

OMO.#: OMO-GS8161Z18DGT-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-150I

Mfr.#: GS8161Z18DGD-150I

OMO.#: OMO-GS8161Z18DGD-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-200IV

Mfr.#: GS8161Z18DGT-200IV

OMO.#: OMO-GS8161Z18DGT-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-250I

Mfr.#: GS8161Z18DD-250I

OMO.#: OMO-GS8161Z18DD-250I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-250

Mfr.#: GS8161Z18DGT-250

OMO.#: OMO-GS8161Z18DGT-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-150

Mfr.#: GS8161Z18DGD-150

OMO.#: OMO-GS8161Z18DGD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-150V

Mfr.#: GS8161Z18DGT-150V

OMO.#: OMO-GS8161Z18DGT-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-250IV

Mfr.#: GS8161Z18DGT-250IV

OMO.#: OMO-GS8161Z18DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-400

Mfr.#: GS8161Z18DD-400

OMO.#: OMO-GS8161Z18DD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-200

Mfr.#: GS8161Z18DGT-200

OMO.#: OMO-GS8161Z18DGT-200-241

SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 100-Pin TQFP (Alt: GS8161Z18DGT-200)
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
GS8161Z18DGD-250V को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २४.४६
US$ २४.४६
25
US$ २२.७१
US$ ५६७.७५
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