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BSC030N03LSGATMA1

BSC030N03LSGATMA1
Mfr. #:
BSC030N03LSGATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC030N03LSGATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC030N03LSGATMA1 DatasheetBSC030N03LSGATMA1 Datasheet (P4-P6)BSC030N03LSGATMA1 Datasheet (P7-P9)BSC030N03LSGATMA1 Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
55 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
69 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
49 S
पतन समय:
4.8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
5.2 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
29 ns
सामान्य टर्न-अन ढिलाइ समय:
7.3 ns
भाग # उपनाम:
BSC030N03LS BSC3N3LSGXT G SP000237661
एकाइ वजन:
0.070548 oz
Tags
BSC030N03LSG, BSC030N03L, BSC030N03, BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 3 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
भाग # Mfg। विवरण स्टक मूल्य
BSC030N03LSGATMA1
DISTI # V72:2272_06384550		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
RoHS: Compliant		3707
  • 3000:$0.3750
  • 1000:$0.3789
  • 500:$0.4630
  • 250:$0.5154
  • 100:$0.5212
  • 25:$0.6420
  • 10:$0.6498
  • 1:$0.7405
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		309In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		309In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4206
BSC030N03LSGATMA1
DISTI # 31273903		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
RoHS: Compliant		3707
  • 3000:$0.3750
  • 1000:$0.3789
  • 500:$0.4630
  • 250:$0.5154
  • 100:$0.5212
  • 25:$0.6420
  • 20:$0.6498
BSC030N03LSGXT/IBM
DISTI # BSC030N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 30000
  • 5000:$0.4119
  • 10000:$0.4109
  • 20000:$0.4099
  • 30000:$0.4089
  • 50000:$0.4069
BSC030N03LSGATMA1
DISTI # 60R2485		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes4606
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LS G
DISTI # 726-BSC030N03LS-G		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		4848
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LSGATMA1
DISTI # 726-BSC030N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		4892
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		500
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
BSC030N03LSGATMA1
DISTI # 8259112P		Infineon Technologies AGMOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL1700
  • 100:£0.2570
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-82739
  • 1:$0.6732
  • 3:$0.5972
  • 10:$0.5016
  • 100:$0.4499
  • 1000:$0.4190
BSC030N03LSGATMA1
DISTI # C1S322000606399		Infineon Technologies AGMOSFETs
RoHS: Compliant		3707
  • 250:$0.5326
  • 100:$0.5342
  • 25:$0.6523
  • 10:$0.6551
BSC030N03LSGATMA1
DISTI # 1775436		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		4606
  • 1:$1.5100
  • 10:$1.2800
  • 100:$0.9800
  • 500:$0.8660
  • 1000:$0.6840
  • 5000:$0.6130
BSC030N03LSGATMA1
DISTI # 1775436		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		4606
  • 5:£0.6060
  • 25:£0.5490
  • 100:£0.4120
  • 250:£0.3690
  • 500:£0.3260
छवि भाग # विवरण
ASFL1-80.000MHZ-EC-T

Mfr.#: ASFL1-80.000MHZ-EC-T

OMO.#: OMO-ASFL1-80-000MHZ-EC-T-ABRACON

 Standard Clock Oscillators 80.0MHz 50ppm -20C +70C
उपलब्धता
स्टक:
Available
अर्डर मा:
1993
मात्रा प्रविष्ट गर्नुहोस्:
BSC030N03LSGATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
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US$ ०.९४
10
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100
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500
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1000
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