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SISS61DN-T1-GE3

SISS61DN-T1-GE3
Mfr. #:
SISS61DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISS61DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SISS61DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SiSS61DN-T1-GE3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
- 20 V
आईडी - निरन्तर ड्रेन वर्तमान:
- 111.9 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
- 0.9 V
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
154 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
ब्रान्ड:
Vishay / Siliconix
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
90 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
Tags
SISS6, SISS, SIS
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
भाग # Mfg। विवरण स्टक मूल्य
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		45In Stock
  • 1000:$0.4648
  • 500:$0.5887
  • 100:$0.7127
  • 10:$0.9140
  • 1:$1.0200
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		45In Stock
  • 1000:$0.4648
  • 500:$0.5887
  • 100:$0.7127
  • 10:$0.9140
  • 1:$1.0200
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.3851
  • 6000:$0.4001
  • 3000:$0.4212
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3		Vishay IntertechnologiesTransistor MOSFET P-CH 20V 111.9A 8-Pin PowerPAK 1212-S T/R (Alt: SISS61DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3839
  • 18000:€0.4009
  • 12000:€0.4539
  • 6000:€0.5599
  • 3000:€0.7809
SISS61DN-T1-GE3
DISTI # 02AH2522		Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-111.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,RoHS Compliant: Yes50
  • 500:$0.5500
  • 250:$0.5950
  • 100:$0.6400
  • 50:$0.7050
  • 25:$0.7700
  • 10:$0.8340
  • 1:$1.0100
SISS61DN-T1-GE3
DISTI # 78-SISS61DN-T1-GE3		Vishay IntertechnologiesMOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
RoHS: Compliant		0
  • 1:$1.0000
  • 10:$0.8260
  • 100:$0.6340
  • 500:$0.5450
  • 1000:$0.4300
  • 3000:$0.4020
  • 6000:$0.3820
  • 9000:$0.3670
SISS61DN-T1-GE3Vishay IntertechnologiesMOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8SAmericas -
    SISS61DN-T1-GE3
    DISTI # 3050577    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C
    RoHS: Compliant    		50
    • 1000:$0.5310
    • 500:$0.6060
    • 250:$0.6850
    • 100:$0.7330
    • 10:$0.9090
    • 1:$1.0600
    SISS61DN-T1-GE3
    DISTI # 3050577    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C50
    • 500:£0.4110
    • 250:£0.4560
    • 100:£0.5000
    • 10:£0.7190
    • 1:£0.9210
    छवि भाग # विवरण
    FDMC510P-F106

    Mfr.#: FDMC510P-F106

    OMO.#: OMO-FDMC510P-F106

    		 MOSFET ST3 20V/8V PCH Power Trench Mosfet
    FDMC6686P

    Mfr.#: FDMC6686P

    OMO.#: OMO-FDMC6686P-ON-SEMICONDUCTOR

    		 IGBT Transistors MOSFET PT8P 20/8V power PQFN33 with cu wire
    FDMC510P-F106

    Mfr.#: FDMC510P-F106

    OMO.#: OMO-FDMC510P-F106-ON-SEMICONDUCTOR

    		 ST3 20V/8V PCH ERTREN
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1989
    मात्रा प्रविष्ट गर्नुहोस्:
    SISS61DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.००
    US$ १.००
    10
    US$ ०.८३
    US$ ८.२६
    100
    US$ ०.६३
    US$ ६३.४०
    500
    US$ ०.५४
    US$ २७२.५०
    1000
    US$ ०.४३
    US$ ४३०.००
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