OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

SIHB10N40D-GE3

SIHB10N40D-GE3
Mfr. #:
SIHB10N40D-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 400V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB10N40D-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB10N40D-GE3 DatasheetSIHB10N40D-GE3 Datasheet (P4-P6)SIHB10N40D-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHB10N40D-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
450 V
आईडी - निरन्तर ड्रेन वर्तमान:
10 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
600 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
15 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
147 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
शृङ्खला:
D
चौडाइ:
9.65 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
18 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
18 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB10, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 400V 10A 3-Pin D2PAK
***
400V N-CH TO220 FULLPAK
***ark
N-CHANNEL 400V
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
भाग # Mfg। विवरण स्टक मूल्य
SIHB10N40D-GE3
DISTI # SIHB10N40D-GE3-ND		Vishay SiliconixMOSFET N-CH 400V 10A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 5000:$0.7535
  • 3000:$0.7825
  • 1000:$0.8404
  • 100:$1.2345
  • 25:$1.4492
  • 10:$1.5360
  • 1:$1.7100
SIHB10N40D-GE3
DISTI # SIHB10N40D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 400V 10A 3-Pin D2PAK - Tape and Reel (Alt: SIHB10N40D-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.7069
  • 6000:$0.7269
  • 4000:$0.7469
  • 2000:$0.7789
  • 1000:$0.8029
SIHB10N40D-GE3
DISTI # SIHB10N40D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 400V 10A 3-Pin D2PAK - Tape and Reel (Alt: SIHB10N40D-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.7069
  • 6000:$0.7269
  • 4000:$0.7469
  • 2000:$0.7789
  • 1000:$0.8029
SIHB10N40D-GE3
DISTI # 78-SIHB10N40D-GE3		Vishay IntertechnologiesMOSFET 400V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$1.7200
  • 10:$1.4300
  • 100:$1.1100
  • 500:$0.9670
  • 1000:$0.8010
  • 2000:$0.7460
  • 5000:$0.7180
  • 10000:$0.6900
SIHB10N40D-GE3Vishay IntertechnologiesMOSFET 400V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    छवि भाग # विवरण
    SCT10N120

    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120

    		 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    FCD850N80Z

    Mfr.#: FCD850N80Z

    OMO.#: OMO-FCD850N80Z

    		 MOSFET SF2 800V 850MOHM E DPAK
    FDP8N50NZ

    Mfr.#: FDP8N50NZ

    OMO.#: OMO-FDP8N50NZ

    		 MOSFET UNIFET2 500V
    FCD850N80Z

    Mfr.#: FCD850N80Z

    OMO.#: OMO-FCD850N80Z-ON-SEMICONDUCTOR

    		 MOSFET N-CH 800V 6A DPAK
    B82801B205A100

    Mfr.#: B82801B205A100

    OMO.#: OMO-B82801B205A100-1181

    		 Current Transformer Sensors Current Transformers 2000uH N1:N2=1:100 T2888 EE5 SMD
    SCT10N120

    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120-STMICROELECTRONICS

    		 MOSFET N-CH 1.2KV TO247-3
    FDP8N50NZ

    Mfr.#: FDP8N50NZ

    OMO.#: OMO-FDP8N50NZ-ON-SEMICONDUCTOR

    		 MOSFET N-CH 500V TO-220AB-3
    NCS2200SQ2T2G

    Mfr.#: NCS2200SQ2T2G

    OMO.#: OMO-NCS2200SQ2T2G-ON-SEMICONDUCTOR

    		 Analog Comparators 0.85-6V Single CMOS Comparato
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHB10N40D-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.७२
    US$ १.७२
    10
    US$ १.४३
    US$ १४.३०
    100
    US$ १.११
    US$ १११.००
    500
    US$ ०.९७
    US$ ४८३.५०
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    More Newest Products
    Top