OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

FDB12N50TM

FDB12N50TM
Mfr. #:
FDB12N50TM
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 500V N-CH MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDB12N50TM डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
500 V
आईडी - निरन्तर ड्रेन वर्तमान:
11.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
550 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
165 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
शृङ्खला:
FDB12N50TM
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.65 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
पतन समय:
35 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
60 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
45 ns
सामान्य टर्न-अन ढिलाइ समय:
25 ns
एकाइ वजन:
0.046296 oz
Tags
FDB12N5, FDB12N, FDB12, FDB1, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK
***ure Electronics
N-Channel 500 V 11.5 A 0.65 Ohm Surface Mount UniFETTM Mosfet - D2PAK-3
***et
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R
***ark
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:11.5A; On Resistance, Rds(on):0.65ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V; Package/Case:3-D-PAK ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
भाग # Mfg। विवरण स्टक मूल्य
FDB12N50TM
DISTI # V36:1790_06298516		ON Semiconductor500V, 11.5A, 0.65 OHM, NCH, MO0
  • 800000:$0.6353
  • 400000:$0.6374
  • 80000:$0.7830
  • 8000:$1.0210
  • 800:$1.0600
FDB12N50TM
DISTI # FDB12N50TMCT-ND		ON SemiconductorMOSFET N-CH 500V 11.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		857In Stock
  • 100:$1.3886
  • 10:$1.7280
  • 1:$1.9200
FDB12N50TM
DISTI # FDB12N50TMDKR-ND		ON SemiconductorMOSFET N-CH 500V 11.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		857In Stock
  • 100:$1.3886
  • 10:$1.7280
  • 1:$1.9200
FDB12N50TM
DISTI # FDB12N50TMTR-ND		ON SemiconductorMOSFET N-CH 500V 11.5A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$0.8228
  • 2400:$0.8545
  • 1600:$0.9178
  • 800:$1.1077
FDB12N50TM
DISTI # FDB12N50TM		ON SemiconductorTrans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB12N50TM)
RoHS: Compliant
Min Qty: 374
Container: Bulk		Americas - 0
  • 3740:$0.8269
  • 1870:$0.8479
  • 1122:$0.8579
  • 748:$0.8699
  • 374:$0.8749
FDB12N50TM
DISTI # FDB12N50TM		ON SemiconductorTrans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB12N50TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$0.6469
  • 4800:$0.6629
  • 3200:$0.6719
  • 1600:$0.6799
  • 800:$0.6849
FDB12N50TM
DISTI # FDB12N50TM		ON SemiconductorTrans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB12N50TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€0.6509
  • 4800:€0.7009
  • 3200:€0.7589
  • 1600:€0.8279
  • 800:€1.0119
FDB12N50TM
DISTI # 52M3141		ON SemiconductorN CH MOSFET, 500V, 11.5A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.65ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 9600:$0.9280
  • 2400:$0.9550
  • 800:$1.0500
  • 1:$1.0600
FDB12N50TM
DISTI # 512-FDB12N50TM		ON SemiconductorMOSFET 500V N-CH MOSFET
RoHS: Compliant		935
  • 1:$2.0500
  • 10:$1.7400
  • 100:$1.3900
  • 500:$1.2200
  • 800:$1.0100
  • 2400:$0.9410
  • 4800:$0.9060
FDB12N50TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 11.5A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		8206
  • 1000:$0.7600
  • 500:$0.8000
  • 100:$0.8400
  • 25:$0.8700
  • 1:$0.9400
FDB12N50TM
DISTI # 8090815P		ON SemiconductorMOSFETFAIRCHILDFDB12N50TM, RL535
  • 50:£0.6620
छवि भाग # विवरण
ISL95808HRZ-T

Mfr.#: ISL95808HRZ-T

OMO.#: OMO-ISL95808HRZ-T

 Gate Drivers HV Sync Rectified MOSFET DRIVER
TPS63000DRCR

Mfr.#: TPS63000DRCR

OMO.#: OMO-TPS63000DRCR

 Switching Voltage Regulators 96% Buck Boost Converter
TPS7A9001DSKR

Mfr.#: TPS7A9001DSKR

OMO.#: OMO-TPS7A9001DSKR

 LDO Voltage Regulators ULTRA LOW NOISE 0.5A LDO WITH PG
JXR0-0015NL

Mfr.#: JXR0-0015NL

OMO.#: OMO-JXR0-0015NL

 Modular Connectors / Ethernet Connectors 100Base-TX NonPoE 1-Port RJ45 THT PIP
SHV12-1A85-78D3K

Mfr.#: SHV12-1A85-78D3K

OMO.#: OMO-SHV12-1A85-78D3K

 Reed Relays REED RELAY SPST 1A 12V
ISL95808HRZ-T

Mfr.#: ISL95808HRZ-T

OMO.#: OMO-ISL95808HRZ-T-INTERSIL

 Gate Drivers HV Sync Rectified MOSFET DRIVER
SHV12-1A85-78D3K

Mfr.#: SHV12-1A85-78D3K

OMO.#: OMO-SHV12-1A85-78D3K-STANDEX-MEDER-ELECTRONICS

 RELAY REED SPST 1A 12V
TPS7A9001DSKR

Mfr.#: TPS7A9001DSKR

OMO.#: OMO-TPS7A9001DSKR-TEXAS-INSTRUMENTS

 IC REG LIN POS ADJ 500MA 10SON
TPS63000DRCR

Mfr.#: TPS63000DRCR

OMO.#: OMO-TPS63000DRCR-TEXAS-INSTRUMENTS

 Voltage Regulators - Switching Regulators 96% Buck Boost Converte
JXR0-0015NL

Mfr.#: JXR0-0015NL

OMO.#: OMO-JXR0-0015NL-PULSE-ELECTRONICS

 CONN MAGJACK 1PORT 100 BASE-TX
उपलब्धता
स्टक:
935
अर्डर मा:
2918
मात्रा प्रविष्ट गर्नुहोस्:
FDB12N50TM को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.७७
US$ १.७७
10
US$ १.५०
US$ १५.००
100
US$ १.२०
US$ १२०.००
500
US$ १.०५
US$ ५२५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • Gate Drivers
    Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • Compare FDB12N50TM
    Compare FDB12N50TM
    FDB12N50 vs FDB12N50F vs FDB12N50FTM
  • NCP137 700 mA LDO Regulators
    NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
More Newest Products
Top