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IPD65R420CFD

IPD65R420CFD
Mfr. #:
IPD65R420CFD
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD65R420CFD डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPD65R420CFD थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
8.7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
420 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
32 nC
Pd - शक्ति अपव्यय:
83.3 W
कन्फिगरेसन:
एकल
व्यापार नाम:
CoolMOS
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
शृङ्खला:
CoolMOS CFD2
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPD65R420CFDBTMA1 IPD65R42CFDXT SP000891704
एकाइ वजन:
0.139332 oz
Tags
IPD65R42, IPD65R4, IPD65R, IPD65, IPD6, IPD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPD65R420CFDBTMA1
DISTI # IPD65R420CFDBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD65R420CFDBTMA1
    DISTI # IPD65R420CFDBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD65R420CFDBTMA1
      DISTI # IPD65R420CFDBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.8756
      IPD65R420CFDBTMA1
      DISTI # SP000891704      		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252 (Alt: SP000891704)
      RoHS: Compliant
      Min Qty: 2500      		Europe - 2500
      • 2500:€1.3259
      • 5000:€1.1129
      • 10000:€0.9289
      • 15000:€0.8099
      • 25000:€0.7579
      IPD65R420CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		46976
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      IPD65R420CFD
      DISTI # 726-IPD65R420CFD      		Infineon Technologies AGMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
      RoHS: Compliant      		0
      • 1:$1.7400
      • 10:$1.4800
      • 100:$1.1800
      • 500:$1.0400
      • 1000:$0.8550
      IPD65R420CFDBTMA1
      DISTI # N/A      		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
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        		 नयाँ र मौलिक
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        5500
        मात्रा प्रविष्ट गर्नुहोस्:
        IPD65R420CFD को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ १.७३
        US$ १.७३
        10
        US$ १.४७
        US$ १४.७०
        100
        US$ १.१७
        US$ ११७.००
        500
        US$ १.०३
        US$ ५१५.००
        1000
        US$ ०.८५
        US$ ८५४.००
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