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IPB80N06S2LH5ATMA4

IPB80N06S2LH5ATMA4
Mfr. #:
IPB80N06S2LH5ATMA4
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CHANNEL_55/60V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB80N06S2LH5ATMA4 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S2LH5ATMA4 DatasheetIPB80N06S2LH5ATMA4 Datasheet (P4-P6)IPB80N06S2LH5ATMA4 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
IPB80N06S2LH5ATMA4 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
कन्फिगरेसन:
एकल
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPB80N06S2L-H5 SP001058126
एकाइ वजन:
0.139332 oz
Tags
IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB80N06S2LH5ATMA4
DISTI # V72:2272_06383493		Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB80N06S2LH5ATMA4
    DISTI # V36:1790_06383493    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000:$1.4550
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4-ND    		Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$1.3096
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2LH5ATMA4)
    Min Qty: 313
    Container: Bulk    		Americas - 0
    • 3130:$1.0159
    • 1565:$1.0339
    • 939:$1.0699
    • 626:$1.1109
    • 313:$1.1519
    IPB80N06S2LH5ATMA4
    DISTI # IPB80N06S2LH5ATMA4    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2LH5ATMA4)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$1.4900
    • 4000:$1.5900
    • 6000:$1.5900
    • 2000:$1.6900
    • 1000:$1.7900
    IPB80N06S2LH5ATMA4
    DISTI # 726-IPB80N06S2LH5AT4    		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
    RoHS: Compliant    		994
    • 1:$3.3000
    • 10:$2.8100
    • 100:$2.4300
    • 250:$2.3100
    • 500:$2.0700
    • 1000:$1.7400
    • 2000:$1.6600
    • 5000:$1.5900
    IPB80N06S2LH5ATMA4Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10000
    • 1000:$1.0500
    • 500:$1.1100
    • 100:$1.1500
    • 25:$1.2000
    • 1:$1.3000
    छवि भाग # विवरण
    STTH5R06GY-TR

    Mfr.#: STTH5R06GY-TR

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    		 Rectifiers Auto Turbo 2 AECQ101 5A 600VR 1.5VF 35ns
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4

    		 MOSFET N-CHANNEL_55/60V
    IPD30N06S215ATMA2

    Mfr.#: IPD30N06S215ATMA2

    OMO.#: OMO-IPD30N06S215ATMA2

    		 MOSFET N-CHANNEL_55/60V
    BDP947H6327XTSA1

    Mfr.#: BDP947H6327XTSA1

    OMO.#: OMO-BDP947H6327XTSA1

    		 Bipolar Transistors - BJT AF TRANSISTORS
    IPD30N06S215ATMA2

    Mfr.#: IPD30N06S215ATMA2

    OMO.#: OMO-IPD30N06S215ATMA2-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 30A TO252-3
    BDP947H6327XTSA1

    Mfr.#: BDP947H6327XTSA1

    OMO.#: OMO-BDP947H6327XTSA1-INFINEON-TECHNOLOGIES

    		 TRANS NPN 45V 3A SOT223
    C0402C102J5RAC7411

    Mfr.#: C0402C102J5RAC7411

    OMO.#: OMO-C0402C102J5RAC7411-1190

    		 CAP, 1000PF, 50V, MLCC, 0402
    IPD30N06S2L13ATMA4

    Mfr.#: IPD30N06S2L13ATMA4

    OMO.#: OMO-IPD30N06S2L13ATMA4-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 30A TO252-3
    STTH5R06GY-TR

    Mfr.#: STTH5R06GY-TR

    OMO.#: OMO-STTH5R06GY-TR-STMICROELECTRONICS

    		 Rectifiers Auto Turbo 2 AECQ101 5A 600VR 1.5VF 35ns
    उपलब्धता
    स्टक:
    994
    अर्डर मा:
    2977
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB80N06S2LH5ATMA4 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.३०
    US$ ३.३०
    10
    US$ २.८१
    US$ २८.१०
    100
    US$ २.४३
    US$ २४३.००
    250
    US$ २.३१
    US$ ५७७.५०
    500
    US$ २.०७
    US$ १ ०३५.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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