IPB65R110CFDAATMA1

Mfr. #:: IPB65R110CFDAATMA1
निर्माता:: Infineon Technologies
विवरण:: RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB65R110CFDAATMA1 डाटा पाना
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थप जानकारी:: IPB65R110CFDAATMA1 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Infineon टेक्नोलोजीहरू

उत्पादन कोटि: ट्रान्जिस्टर - FETs, MOSFETs - एकल

शृङ्खला: IPB65R110

प्याकेजिङ: रील

अंश-उपनामहरू: IPB65R110CFDA IPB65R110CFDAXT SP000896402

एकाइ - वजन: 0.068654 oz

ट्रेडनेम: CoolMOS

प्याकेज-केस: TO-263-3

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

ट्रान्जिस्टर-प्रकार: 1 N-Channel

आईडी-निरन्तर-नाली-वर्तमान: 99.6 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 650 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 110 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

Tags: IPB65R110CFDA, IPB65R11, IPB65R1, IPB65, IPB6, IPB

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R110CFDAATMA1 विवरण

***ical: Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R

***p One Stop Japan: Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) TO-263 T/R

***et Europe: Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R

***ronik: N-CH 650V 31,2A 110mOhm TO263-3

***i-Key: MOSFET N-CH TO263-3

***ark: Mosfet, N-Ch, Aec-Q101, 650V, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.099Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8mW; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, AEC-Q101 650V TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8mW; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPB65R110CFDAATMA1 थप जानकारी

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$3.8767
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1000In Stock	500:$4.5846 100:$5.4720 10:$6.6550 1:$7.3900
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1000In Stock	500:$4.5846 100:$5.4720 10:$6.6550 1:$7.3900
IPB65R110CFDAATMA1 DISTI # IPB65R110CFDAATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R110CFDAATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.3900 4000:$3.3900 6000:$3.3900 10000:$3.3900
IPB65R110CFDAATMA1 DISTI # SP000896402	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: SP000896402) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.5900 2000:€3.3900 4000:€3.2900 6000:€3.0900 10000:€2.7900
IPB65R110CFDAATMA1 DISTI # 13AC9032	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	40	500:$4.0500 250:$4.4400 100:$4.6500 50:$5.0100 25:$5.3600 10:$5.6200 1:$6.2100
IPB65R110CFDA DISTI # 726-IPB65R110CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 99.6A D2PAK-2 RoHS: Compliant	725	1:$6.2100 10:$5.6100 25:$5.3500 100:$4.6400 250:$4.4300 500:$4.0400 1000:$3.5200 2000:$3.3900
IPB65R110CFDAATMA1 DISTI # 726-IPB65R110CFDAATM	Infineon Technologies AG	MOSFET N-Ch 650V 99.6A D2PAK-2 RoHS: Compliant	995	1:$6.2100 10:$5.6100 25:$5.3500 100:$4.6400 250:$4.4300 500:$4.0400 1000:$3.5200 2000:$3.3900
IPB65R110CFDAATMA1 DISTI # 2726046	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-263-3 RoHS: Compliant	130	100:£4.2600 10:£4.9100 1:£6.2800
IPB65R110CFDAATMA1 DISTI # 2726046	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-263-3 RoHS: Compliant	40	500:$7.3100 100:$8.7300 10:$10.6100 1:$11.7900

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IPB65R110CFDA OMO.#: OMO-IPB65R110CFDA	MOSFET N-Ch 650V 99.6A D2PAK-2
	Mfr.#: IPB65R110CFDAATMA1 OMO.#: OMO-IPB65R110CFDAATMA1	MOSFET N-Ch 650V 99.6A D2PAK-2
	Mfr.#: IPB65R110CFDATMA1 OMO.#: OMO-IPB65R110CFDATMA1	MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R110CFDATMA2 OMO.#: OMO-IPB65R110CFDATMA2-INFINEON-TECHNOLOGIES	HIGH POWER_LEGACY
	Mfr.#: IPB65R110CFD OMO.#: OMO-IPB65R110CFD-1190	MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
	Mfr.#: IPB65R110CFD 65F6110 OMO.#: OMO-IPB65R110CFD-65F6110-1190	नयाँ र मौलिक
	Mfr.#: IPB65R110CFDA OMO.#: OMO-IPB65R110CFDA-1190	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: IPB65R110CFDA)
	Mfr.#: IPB65R110CFDA 65F6110A OMO.#: OMO-IPB65R110CFDA-65F6110A-1190	नयाँ र मौलिक
	Mfr.#: IPB65R110CFDATMA1 OMO.#: OMO-IPB65R110CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 31.2A TO263
	Mfr.#: IPB65R110CFDAATMA1 OMO.#: OMO-IPB65R110CFDAATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2

उपलब्धता

स्टक:: Available
अर्डर मा:: 3500
मात्रा प्रविष्ट गर्नुहोस्:

IPB65R110CFDAATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ४.५६~~; ~~US$ ४.५६~~

10: ~~US$ ४.३३~~; ~~US$ ४३.३३~~

100: ~~US$ ४.११~~; ~~US$ ४१०.५४~~

500: ~~US$ ३.८८~~; ~~US$ १ ९३८.६५~~

1000: ~~US$ ३.६५~~; ~~US$ ३ ६४९.२०~~

बाट सुरु गर्नुहोस्

IPB65R110CFDA 6
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IPB65R1 34
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IPB65R110CFDAATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes