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IPB65R110CFDATMA1

IPB65R110CFDATMA1
Mfr. #:
IPB65R110CFDATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB65R110CFDATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB65R110CFDATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
31.2 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
99 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
118 nC
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
277.8 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
CoolMOS CFDA
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
11 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
68 ns
सामान्य टर्न-अन ढिलाइ समय:
16 ns
भाग # उपनाम:
IPB65R110CFD IPB65R11CFDXT SP000896400
एकाइ वजन:
0.139332 oz
Tags
IPB65R110CFDA, IPB65R11, IPB65R1, IPB65, IPB6, IPB
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 110 mOhm 118 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R
***Components
MOSFET N-Ch 700V 31.2A CoolMOS TO263
***an P&S
650V,31.2A,N-channel Power MOSFET
***ark
High Power_Legacy Rohs Compliant: Yes
***ronik
N-CH 650V 31,2A 99mOhm TO263-3
***i-Key
HIGH POWER_LEGACY
***ment14 APAC
MOSFET, N CH, 700V, 31.2A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N CH, 700V, 31.2A, TO-263-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:31.2A; Napięcie drenu / źródła Vds:700V; Rezystancja przewodzenia Rds(on):0.099ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:-; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPB65R110CFDATMA1
DISTI # V36:1790_06378229		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$3.0830
  • 500000:$3.0860
  • 100000:$3.3200
  • 10000:$3.7210
  • 1000:$3.7870
IPB65R110CFDATMA1
DISTI # V72:2272_06378229		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$2.9983
    • 1000:$3.1561
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 500:$3.8545
    • 100:$4.5279
    • 10:$5.5260
    • 1:$6.1500
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 500:$3.8545
    • 100:$4.5279
    • 10:$5.5260
    • 1:$6.1500
    IPB65R110CFDATMA1
    DISTI # IPB65R110CFDATMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R110CFDATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$2.7281
    • 6000:$2.7775
    • 4000:$2.8742
    • 2000:$2.9819
    • 1000:$3.0937
    IPB65R110CFDATMA1
    DISTI # SP000896400    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263 (Alt: SP000896400)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 10000:€2.2900
    • 6000:€2.4900
    • 4000:€2.6900
    • 2000:€2.7900
    • 1000:€2.8900
    IPB65R110CFDATMA1.
    DISTI # 29AC7028    		Infineon Technologies AGHIGH POWER_LEGACY ROHS COMPLIANT: YES0
    • 10000:$2.7300
    • 6000:$2.7800
    • 4000:$2.8800
    • 2000:$2.9900
    • 1:$3.1000
    IPB65R110CFD
    DISTI # 726-IPB65R110CFD    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant    		2027
    • 1:$5.6800
    • 10:$4.8300
    • 100:$4.1800
    • 250:$3.9700
    • 500:$3.5600
    • 1000:$3.0000
    IPB65R110CFDATMA1
    DISTI # 726-IPB65R110CFDATMA    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant    		1000
    • 1:$5.6800
    • 10:$4.8300
    • 100:$4.1800
    • 250:$3.9700
    • 500:$3.5600
    • 1000:$3.0000
    IPB65R110CFDATMA1Infineon Technologies AG 
    RoHS: Not Compliant    		140Cut Tape/Mini-Reel
    • 1:$4.1300
    • 50:$3.4900
    • 100:$3.3900
    • 250:$3.2600
    • 500:$3.1700
    IPB65R110CFDATMA1
    DISTI # 2443390    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.5200
    • 500:$5.3600
    • 250:$5.9800
    • 100:$6.3000
    • 10:$7.2800
    • 1:$8.5600
    IPB65R110CFDATMA1
    DISTI # 2443390RL    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.5200
    • 500:$5.3600
    • 250:$5.9800
    • 100:$6.3000
    • 10:$7.2800
    • 1:$8.5600
    IPB65R110CFDATMA1
    DISTI # XSFP00000100145    		Infineon Technologies AG 
    RoHS: Compliant    		76 in Stock0 on Order
    • 76:$5.5100
    • 25:$5.9000
    छवि भाग # विवरण
    STB37N60DM2AG

    Mfr.#: STB37N60DM2AG

    OMO.#: OMO-STB37N60DM2AG

    		 MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
    STB28N65M2

    Mfr.#: STB28N65M2

    OMO.#: OMO-STB28N65M2

    		 MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
    STB28N65M2

    Mfr.#: STB28N65M2

    OMO.#: OMO-STB28N65M2-STMICROELECTRONICS

    		 MOSFET N-CH 650V 20A D2PAK
    STB37N60DM2AG

    Mfr.#: STB37N60DM2AG

    OMO.#: OMO-STB37N60DM2AG-STMICROELECTRONICS

    		 MOSFET N-CH 600V 28A
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1984
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB65R110CFDATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ५.६८
    US$ ५.६८
    10
    US$ ४.८३
    US$ ४८.३०
    100
    US$ ४.१८
    US$ ४१८.००
    250
    US$ ३.९७
    US$ ९९२.५०
    500
    US$ ३.५६
    US$ १ ७८०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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