BSD235NH6327XT

BSD235NH6327XT
Mfr. #:
BSD235NH6327XT
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 20V 950mA SOT-363-6
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSD235NH6327XT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSD235NH6327XT थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-363-6
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
950 mA
Rds अन - ड्रेन-स्रोत प्रतिरोध:
266 mOhms, 266 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
700 mV
Vgs - गेट-स्रोत भोल्टेज:
12 V
Qg - गेट चार्ज:
320 pC, 320 pC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
500 mW (1/2 W)
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
0.9 mm
लम्बाइ:
2 mm
शृङ्खला:
BSD235
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
1.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
2 S, 2 S
पतन समय:
1.2 ns, 1.2 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
3.6 ns, 3.6 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
4.5 ns, 4.5 ns
सामान्य टर्न-अन ढिलाइ समय:
3.8 ns, 3.8 ns
भाग # उपनाम:
BSD235NH6327 BSD235NH6327XTSA1 SP000917652
एकाइ वजन:
0.000265 oz
Tags
BSD235NH, BSD235N, BSD23, BSD2, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
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MOSFET, DUAL N-CH, 30V, 1A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:1A; Continuous Drain Current Id P Channel:1A RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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***des Inc SCT
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***ark
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***p One Stop Global
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***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.066A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 845mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
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***emi
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***emi
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Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
भाग # Mfg। विवरण स्टक मूल्य
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1CT-ND
Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
270In Stock
  • 1000:$0.1341
  • 500:$0.1749
  • 100:$0.2496
  • 10:$0.3590
  • 1:$0.4500
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1DKR-ND
Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
270In Stock
  • 1000:$0.1341
  • 500:$0.1749
  • 100:$0.2496
  • 10:$0.3590
  • 1:$0.4500
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1TR-ND
Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.1203
BSD235NH6327XTSA1
DISTI # SP000917652
Infineon Technologies AGTrans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R (Alt: SP000917652)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 15000
  • 3000:€0.1019
  • 6000:€0.0789
  • 12000:€0.0639
  • 18000:€0.0539
  • 30000:€0.0509
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1
Infineon Technologies AGTrans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD235NH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0689
  • 15000:$0.0659
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0599
BSD235NH6327XTSA1
DISTI # 46AC0522
Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:950mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.266ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage RoHS Compliant: Yes0
  • 1000:$0.1080
  • 500:$0.1200
  • 250:$0.1320
  • 100:$0.1440
  • 50:$0.1850
  • 25:$0.2250
  • 10:$0.2660
  • 1:$0.3500
BSD235NH6327XTSA1
DISTI # 726-BSD235NH6327XTS
Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant
18443
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
BSD235NH6327XT
DISTI # 726-BSD235NH6327XTSA
Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant
8008
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
BSD235N H6327
DISTI # 726-BSD235NH6327
Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant
0
  • 1:$0.3700
  • 10:$0.2800
  • 100:$0.1600
  • 1000:$0.1200
  • 3000:$0.1000
BSD235NH6327XTSA1
DISTI # 8270115
Infineon Technologies AGINFINEON TRANS BSD235NH6327XT, RL9000
  • 6000:£0.0640
  • 3000:£0.0670
  • 1000:£0.0780
  • 250:£0.1060
BSD235NH6327XTSA1
DISTI # 2443477
Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6
RoHS: Compliant
0
  • 3000:$0.1590
  • 1000:$0.1910
  • 100:$0.2540
  • 10:$0.4440
  • 1:$0.5860
BSD235NH6327XTSA1
DISTI # 2443477
Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6
RoHS: Compliant
0
  • 100:£0.1450
  • 25:£0.2840
  • 5:£0.2950
BSD235NH6327XTSA1
DISTI # XSKDRABS0029373
Infineon Technologies AG 
RoHS: Compliant
12000
  • 12000:$0.0779
  • 9000:$0.0834
छवि भाग # विवरण
10M02SCU169C8G

Mfr.#: 10M02SCU169C8G

OMO.#: OMO-10M02SCU169C8G

FPGA - Field Programmable Gate Array
24AA02E48T-E/OT

Mfr.#: 24AA02E48T-E/OT

OMO.#: OMO-24AA02E48T-E-OT

EEPROM 2K, SERIAL EE, EXT 256 X 8 1.8V
2N7002LT1G

Mfr.#: 2N7002LT1G

OMO.#: OMO-2N7002LT1G

MOSFET 60V 115mA N-Channel
MBRS340T3G

Mfr.#: MBRS340T3G

OMO.#: OMO-MBRS340T3G

Schottky Diodes & Rectifiers 3A 40V
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

Thick Film Resistors - SMD 10K OHM 1%
RC0402FR-074K7L

Mfr.#: RC0402FR-074K7L

OMO.#: OMO-RC0402FR-074K7L

Thick Film Resistors - SMD 4.7K OHM 1%
RC0402FR-0722RL

Mfr.#: RC0402FR-0722RL

OMO.#: OMO-RC0402FR-0722RL

Thick Film Resistors - SMD 22 OHM 1%
10M02SCU169C8G

Mfr.#: 10M02SCU169C8G

OMO.#: OMO-10M02SCU169C8G-INTEL

IC FPGA 130 I/O 169UBGA MAX 10
2N7002LT1G

Mfr.#: 2N7002LT1G

OMO.#: OMO-2N7002LT1G-ON-SEMICONDUCTOR

MOSFET N-CH 60V 0.115A SOT-23
24AA02E48T-E/OT

Mfr.#: 24AA02E48T-E/OT

OMO.#: OMO-24AA02E48T-E-OT-MICROCHIP-TECHNOLOGY

IC EEPROM 2K I2C 400KHZ SOT23-5
उपलब्धता
स्टक:
12
अर्डर मा:
1995
मात्रा प्रविष्ट गर्नुहोस्:
BSD235NH6327XT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.३४
US$ ०.३४
10
US$ ०.२७
US$ २.६६
100
US$ ०.१४
US$ १४.४०
1000
US$ ०.११
US$ १०८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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